Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Kwang Soo Seol, Akihito Ieki, Yoshimichi Ohki, Hiroyuki Nishikawa, Masaharu Tachimori

    Research output: Contribution to journalArticle

    36 Citations (Scopus)

    Abstract

    Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

    Original languageEnglish
    Pages (from-to)412-416
    Number of pages5
    JournalJournal of Applied Physics
    Volume79
    Issue number1
    Publication statusPublished - 1996 Jan 1

    Fingerprint

    point defects
    implantation
    photoluminescence
    oxygen
    excitation
    defects
    silica glass
    decay
    oxygen ions
    excimer lasers
    synchrotron radiation
    film thickness
    laser beams
    oxides

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen. / Seol, Kwang Soo; Ieki, Akihito; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Tachimori, Masaharu.

    In: Journal of Applied Physics, Vol. 79, No. 1, 01.01.1996, p. 412-416.

    Research output: Contribution to journalArticle

    Seol, KS, Ieki, A, Ohki, Y, Nishikawa, H & Tachimori, M 1996, 'Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen', Journal of Applied Physics, vol. 79, no. 1, pp. 412-416.
    Seol, Kwang Soo ; Ieki, Akihito ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Tachimori, Masaharu. / Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen. In: Journal of Applied Physics. 1996 ; Vol. 79, No. 1. pp. 412-416.
    @article{7f98b513286643b0a3c7bc812a5e0f55,
    title = "Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen",
    abstract = "Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.",
    author = "Seol, {Kwang Soo} and Akihito Ieki and Yoshimichi Ohki and Hiroyuki Nishikawa and Masaharu Tachimori",
    year = "1996",
    month = "1",
    day = "1",
    language = "English",
    volume = "79",
    pages = "412--416",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "1",

    }

    TY - JOUR

    T1 - Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

    AU - Seol, Kwang Soo

    AU - Ieki, Akihito

    AU - Ohki, Yoshimichi

    AU - Nishikawa, Hiroyuki

    AU - Tachimori, Masaharu

    PY - 1996/1/1

    Y1 - 1996/1/1

    N2 - Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

    AB - Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

    UR - http://www.scopus.com/inward/record.url?scp=0029770081&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0029770081&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0029770081

    VL - 79

    SP - 412

    EP - 416

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 1

    ER -