Photoluminescence study on point defects in SIMOX buried SiO 2 film

K. S. Seol, A. Ieki, Yoshimichi Ohki, H. Nishikawa, M. Tachimori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Abstract

    Defects in buried SiO 2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.

    Original languageEnglish
    Title of host publicationMaterials Science Forum
    PublisherTrans Tech Publ
    Pages1909-1914
    Number of pages6
    Volume196-201
    Editionpt 4
    Publication statusPublished - 1995
    EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
    Duration: 1995 Jul 231995 Jul 28

    Other

    OtherProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
    CitySendai, Jpn
    Period95/7/2395/7/28

    Fingerprint

    Point defects
    Photoluminescence
    Oxygen
    Excimer lasers
    Oxygen vacancies
    Fused silica
    Synchrotron radiation
    Ion implantation
    Ions
    Defects

    ASJC Scopus subject areas

    • Materials Science(all)

    Cite this

    Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Tachimori, M. (1995). Photoluminescence study on point defects in SIMOX buried SiO 2 film In Materials Science Forum (pt 4 ed., Vol. 196-201, pp. 1909-1914). Trans Tech Publ.

    Photoluminescence study on point defects in SIMOX buried SiO 2 film . / Seol, K. S.; Ieki, A.; Ohki, Yoshimichi; Nishikawa, H.; Tachimori, M.

    Materials Science Forum. Vol. 196-201 pt 4. ed. Trans Tech Publ, 1995. p. 1909-1914.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Seol, KS, Ieki, A, Ohki, Y, Nishikawa, H & Tachimori, M 1995, Photoluminescence study on point defects in SIMOX buried SiO 2 film in Materials Science Forum. pt 4 edn, vol. 196-201, Trans Tech Publ, pp. 1909-1914, Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4), Sendai, Jpn, 95/7/23.
    Seol KS, Ieki A, Ohki Y, Nishikawa H, Tachimori M. Photoluminescence study on point defects in SIMOX buried SiO 2 film In Materials Science Forum. pt 4 ed. Vol. 196-201. Trans Tech Publ. 1995. p. 1909-1914
    Seol, K. S. ; Ieki, A. ; Ohki, Yoshimichi ; Nishikawa, H. ; Tachimori, M. / Photoluminescence study on point defects in SIMOX buried SiO 2 film Materials Science Forum. Vol. 196-201 pt 4. ed. Trans Tech Publ, 1995. pp. 1909-1914
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    abstract = "Defects in buried SiO 2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.",
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    AU - Seol, K. S.

    AU - Ieki, A.

    AU - Ohki, Yoshimichi

    AU - Nishikawa, H.

    AU - Tachimori, M.

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