Photoluminescence study on point defects in SIMOX buried SiO2 film

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

Research output: Contribution to journalConference article


Defects in buried SiO2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.

Original languageEnglish
Pages (from-to)1909-1914
Number of pages6
JournalMaterials Science Forum
Issue numberpt 4
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Tachimori, M. (1995). Photoluminescence study on point defects in SIMOX buried SiO2 film. Materials Science Forum, 196-201(pt 4), 1909-1914.