Abstract
Optical interconnects are expected to reduce the power consumption of ICT instruments. To realize chip-to-chip or chip-scale optical interconnects, it is essential to fabricate semiconductor lasers with a smaller energy cost. In this context, we are developing lambda-scale embedded active-region photonic-crystal (LEAP) lasers as light sources for chip-scale optical interconnects. We demonstrated the first continuous-wave (CW) operation of LEAP lasers in 2012 and reported a record low threshold current and energy cost of 4.8 μA and 4.4 fJ/bit at 10 Gbit/s in 2013. We have also integrated photonic crystal photodetectors on the same InP chip and demonstrated waveform transfer along 500-μm-long waveguides. Although LEAP lasers exhibit excellent performance, they have to be integrated on Si wafers for use as light sources for chip-scale optical interconnects. In this paper, we give a brief overview of our LEAP lasers on InP and report our recent progress in fabricating them on Si. We bonded the InP wafers with quantum-well gain layers directly on thermally oxidized Si wafers and performed all process steps on the Si wafer, including high-temperature regrowth. After this process modification, we again achieved CW operation and obtained a threshold current of 57 μA with a maximum output power of more than 3.5 μW at the output waveguides. An output light was successfully guided through 500 × 250-nm InP waveguides.
| Original language | English |
|---|---|
| Title of host publication | Novel In-Plane Semiconductor Lasers XV |
| Editors | Alexey A. Belyanin, Peter M. Smowton |
| Publisher | SPIE |
| ISBN (Electronic) | 9781510600027 |
| DOIs | |
| Publication status | Published - 2016 Jan 1 |
| Externally published | Yes |
| Event | Novel In-Plane Semiconductor Lasers XV - San Francisco, United States Duration: 2016 Feb 15 → 2016 Feb 18 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 9767 |
| ISSN (Print) | 0277-786X |
| ISSN (Electronic) | 1996-756X |
Conference
| Conference | Novel In-Plane Semiconductor Lasers XV |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 16/2/15 → 16/2/18 |
Fingerprint
Keywords
- Buried heterostructure
- On-Si lasers
- Optical interconnects
- Photonic-crystal lasers
- Wafer bonding
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Photonic-crystal lasers on silicon for chip-scale optical interconnects. / Takeda, Koji; Fujii, Takuro; Shinya, Akihiko; Kuramochi, Eiichi; Notomi, Masaya; Hasebe, Koichi; Kakitsuka, Takaaki; Matsuo, Shinji.
Novel In-Plane Semiconductor Lasers XV. ed. / Alexey A. Belyanin; Peter M. Smowton. SPIE, 2016. 976710 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9767).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Photonic-crystal lasers on silicon for chip-scale optical interconnects
AU - Takeda, Koji
AU - Fujii, Takuro
AU - Shinya, Akihiko
AU - Kuramochi, Eiichi
AU - Notomi, Masaya
AU - Hasebe, Koichi
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Optical interconnects are expected to reduce the power consumption of ICT instruments. To realize chip-to-chip or chip-scale optical interconnects, it is essential to fabricate semiconductor lasers with a smaller energy cost. In this context, we are developing lambda-scale embedded active-region photonic-crystal (LEAP) lasers as light sources for chip-scale optical interconnects. We demonstrated the first continuous-wave (CW) operation of LEAP lasers in 2012 and reported a record low threshold current and energy cost of 4.8 μA and 4.4 fJ/bit at 10 Gbit/s in 2013. We have also integrated photonic crystal photodetectors on the same InP chip and demonstrated waveform transfer along 500-μm-long waveguides. Although LEAP lasers exhibit excellent performance, they have to be integrated on Si wafers for use as light sources for chip-scale optical interconnects. In this paper, we give a brief overview of our LEAP lasers on InP and report our recent progress in fabricating them on Si. We bonded the InP wafers with quantum-well gain layers directly on thermally oxidized Si wafers and performed all process steps on the Si wafer, including high-temperature regrowth. After this process modification, we again achieved CW operation and obtained a threshold current of 57 μA with a maximum output power of more than 3.5 μW at the output waveguides. An output light was successfully guided through 500 × 250-nm InP waveguides.
AB - Optical interconnects are expected to reduce the power consumption of ICT instruments. To realize chip-to-chip or chip-scale optical interconnects, it is essential to fabricate semiconductor lasers with a smaller energy cost. In this context, we are developing lambda-scale embedded active-region photonic-crystal (LEAP) lasers as light sources for chip-scale optical interconnects. We demonstrated the first continuous-wave (CW) operation of LEAP lasers in 2012 and reported a record low threshold current and energy cost of 4.8 μA and 4.4 fJ/bit at 10 Gbit/s in 2013. We have also integrated photonic crystal photodetectors on the same InP chip and demonstrated waveform transfer along 500-μm-long waveguides. Although LEAP lasers exhibit excellent performance, they have to be integrated on Si wafers for use as light sources for chip-scale optical interconnects. In this paper, we give a brief overview of our LEAP lasers on InP and report our recent progress in fabricating them on Si. We bonded the InP wafers with quantum-well gain layers directly on thermally oxidized Si wafers and performed all process steps on the Si wafer, including high-temperature regrowth. After this process modification, we again achieved CW operation and obtained a threshold current of 57 μA with a maximum output power of more than 3.5 μW at the output waveguides. An output light was successfully guided through 500 × 250-nm InP waveguides.
KW - Buried heterostructure
KW - On-Si lasers
KW - Optical interconnects
KW - Photonic-crystal lasers
KW - Wafer bonding
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U2 - 10.1117/12.2208312
DO - 10.1117/12.2208312
M3 - Conference contribution
AN - SCOPUS:84978511545
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Novel In-Plane Semiconductor Lasers XV
A2 - Belyanin, Alexey A.
A2 - Smowton, Peter M.
PB - SPIE
ER -