Photonic crystal lasers using wavelength-scale embedded active region

Shinji Matsuo, Tomonari Sato, Koji Takeda, Akihiko Shinya, Kengo Nozaki, Eiichi Kuramochi, Hideaki Taniyama, Masaya Notomi, Takuro Fujii, Koichi Hasebe, Takaaki Kakitsuka

Research output: Contribution to journalReview article

25 Citations (Scopus)

Abstract

Lasers with ultra-low operating energy are desired for use in chip-to-chip and on-chip optical interconnects. If we are to reduce the operating energy, we must reduce the active volume. Therefore, a photonic crystal (PhC) laser with a wavelength-scale cavity has attracted a lot of attention because a PhC provides a large Q-factor with a small volume. To improve this device's performance, we employ an embedded active region structure in which the wavelength-scale active region is buried with an InP PhC slab. This structure enables us to achieve effective confinement of both carriers and photons, and to improve the thermal resistance of the device. Thus, we have obtained a large external differential quantum efficiency of 55% and an output power of -10 dBm by optical pumping. For electrical pumping, we use a lateral p-i-n structure that employs Zn diffusion and Si ion implantation for p-type and n-type doping, respectively. We have achieved room-temperature continuous-wave operation with a threshold current of 7.8 μA and a maximum 3 dB bandwidth of 16.2 GHz. The results of an experimental bit error rate measurement with a 10 Gbit s-1 NRZ signal reveal the minimum operating energy for transferring a single bit of 5.5 fJ. These results show the potential of this laser to be used for very short reach interconnects. We also describe the optimal design of cavity quality (Q) factor in terms of achieving a large output power with a low operating energy using a calculation based on rate equations. When we assume an internal absorption loss of 20 cm-1, the optimized coupling Q-factor is 2000.

Original languageEnglish
Article number023001
JournalJournal of Physics D: Applied Physics
Volume47
Issue number2
DOIs
Publication statusPublished - 2014 Jan 15
Externally publishedYes

Fingerprint

Photonic crystals
photonics
Q factors
Wavelength
Lasers
chips
wavelengths
crystals
lasers
Optical pumping
Pumping (laser)
Optical interconnects
Quantum efficiency
Heat resistance
Ion implantation
Bit error rate
cavities
optical interconnects
energy
output

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Matsuo, S., Sato, T., Takeda, K., Shinya, A., Nozaki, K., Kuramochi, E., ... Kakitsuka, T. (2014). Photonic crystal lasers using wavelength-scale embedded active region. Journal of Physics D: Applied Physics, 47(2), [023001]. https://doi.org/10.1088/0022-3727/47/2/023001

Photonic crystal lasers using wavelength-scale embedded active region. / Matsuo, Shinji; Sato, Tomonari; Takeda, Koji; Shinya, Akihiko; Nozaki, Kengo; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya; Fujii, Takuro; Hasebe, Koichi; Kakitsuka, Takaaki.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 2, 023001, 15.01.2014.

Research output: Contribution to journalReview article

Matsuo, S, Sato, T, Takeda, K, Shinya, A, Nozaki, K, Kuramochi, E, Taniyama, H, Notomi, M, Fujii, T, Hasebe, K & Kakitsuka, T 2014, 'Photonic crystal lasers using wavelength-scale embedded active region', Journal of Physics D: Applied Physics, vol. 47, no. 2, 023001. https://doi.org/10.1088/0022-3727/47/2/023001
Matsuo, Shinji ; Sato, Tomonari ; Takeda, Koji ; Shinya, Akihiko ; Nozaki, Kengo ; Kuramochi, Eiichi ; Taniyama, Hideaki ; Notomi, Masaya ; Fujii, Takuro ; Hasebe, Koichi ; Kakitsuka, Takaaki. / Photonic crystal lasers using wavelength-scale embedded active region. In: Journal of Physics D: Applied Physics. 2014 ; Vol. 47, No. 2.
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