Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation

S. Matsui; Y. Takei; A. Matsumoto; K. Akahane; Y. Matsushima; H. Ishikawa; K. Utaka

doi:10.1109/ICIPRM.2016.7528583

Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation

S. Matsui, Y. Takei, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B⁺ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with the QDI technique to show a large output of >20mW and a wavelength selective characteristic associated with MRRs.

Original language	English
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509019649
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528583
Publication status	Published - 2016 Aug 1
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 2016 Jun 26 → 2016 Jun 30

Publication series

Name	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other	2016 Compound Semiconductor Week, CSW 2016
Country/Territory	Japan
City	Toyama
Period	16/6/26 → 16/6/30

Keywords

integrated optics devices
intermixng
micro-ring-resonator
qauntum dot
semiconductor laser

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICIPRM.2016.7528583

Cite this

Matsui, S., Takei, Y., Matsumoto, A., Akahane, K., Matsushima, Y., Ishikawa, H., & Utaka, K. (2016). Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528583] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528583

Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation. / Matsui, S.; Takei, Y.; Matsumoto, A. et al.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528583 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsui, S, Takei, Y, Matsumoto, A, Akahane, K, Matsushima, Y, Ishikawa, H & Utaka, K 2016, Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528583, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528583

Matsui S, Takei Y, Matsumoto A, Akahane K, Matsushima Y, Ishikawa H et al. Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528583. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). doi: 10.1109/ICIPRM.2016.7528583

Matsui, S. ; Takei, Y. ; Matsumoto, A. et al. / Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

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abstract = "We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with the QDI technique to show a large output of >20mW and a wavelength selective characteristic associated with MRRs.",

keywords = "integrated optics devices, intermixng, micro-ring-resonator, qauntum dot, semiconductor laser",

author = "S. Matsui and Y. Takei and A. Matsumoto and K. Akahane and Y. Matsushima and H. Ishikawa and K. Utaka",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",

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AU - Ishikawa, H.

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Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation

Abstract

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