Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

Hiroshi Takehira, Md Saidul Islam, Mohammad Razaul Karim, Yuta Shudo, Ryo Ohtani, Leonard F. Lindoy, Takaaki Taniguchi, Minoru Osada, Shinya Hayami

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.

    Original languageEnglish
    Pages (from-to)6941-6944
    Number of pages4
    JournalChemistrySelect
    Volume2
    Issue number24
    DOIs
    Publication statusPublished - 2017 Jan 1

    Keywords

    • Graphene Oxide
    • n-type Field-effect transistor
    • Photoreduction

    ASJC Scopus subject areas

    • Chemistry(all)

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  • Cite this

    Takehira, H., Islam, M. S., Karim, M. R., Shudo, Y., Ohtani, R., Lindoy, L. F., Taniguchi, T., Osada, M., & Hayami, S. (2017). Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide. ChemistrySelect, 2(24), 6941-6944. https://doi.org/10.1002/slct.201701509