Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

S. F. Chichibu, Takayuki Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

    Original languageEnglish
    Pages (from-to)171-176
    Number of pages6
    JournalPhysica Status Solidi (A) Applied Research
    Volume192
    Issue number1
    DOIs
    Publication statusPublished - 2002 Jul

    Fingerprint

    Aluminum Oxide
    Epilayers
    Molecular beam epitaxy
    Sapphire
    Excitons
    polaritons
    Photoluminescence
    sapphire
    molecular beam epitaxy
    excitons
    photoluminescence
    Epitaxial films
    Electromagnetic waves
    oscillator strengths
    electromagnetic radiation
    LDS 751
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy. / Chichibu, S. F.; Sota, Takayuki; Fons, P. J.; Iwata, K.; Yamada, A.; Matsubara, K.; Niki, S.

    In: Physica Status Solidi (A) Applied Research, Vol. 192, No. 1, 07.2002, p. 171-176.

    Research output: Contribution to journalArticle

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    abstract = "Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.",
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    AU - Sota, Takayuki

    AU - Fons, P. J.

    AU - Iwata, K.

    AU - Yamada, A.

    AU - Matsubara, K.

    AU - Niki, S.

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    AB - Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

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