Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

S. F. Chichibu, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki

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5 Citations (Scopus)


Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 2002 Jul 1
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: 2002 Mar 112002 Mar 15


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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