Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth

S. F. Chichibu, K. Torii, T. Deguchi, Takayuki Sota, A. Setoguchi, H. Nakanishi, T. Azuhata, S. Nakamura

    Research output: Contribution to journalArticle

    45 Citations (Scopus)

    Abstract

    Photoreflectance (PR) spectra of high-purity, nearly free-standing GaN substrate were compared with emission and reflectance spectra, which were analyzed based on a model exciton-polariton picture in which A, B, and C free excitons couple simultaneously to an electromagnetic wave. The GaN substrate with reduced dislocation density was prepared by lateral epitaxial overgrowth technique and it exhibited predominant excitonic emissions with the decay time nearly I ns even at room temperature. The transition energies obtained from the PR spectrum agree with the energies of bottlenecks of the excitonic polariton branches. The result means that perturbation-induced change in the dielectric function is mainly due to polaritons. Temperature dependence of the A-exciton energy was well described using a model which assumes Einstein phonons.

    Original languageEnglish
    Pages (from-to)1576-1578
    Number of pages3
    JournalApplied Physics Letters
    Volume76
    Issue number12
    Publication statusPublished - 2000 Mar 20

    Fingerprint

    polaritons
    excitons
    energy
    electromagnetic radiation
    purity
    emission spectra
    phonons
    reflectance
    perturbation
    temperature dependence
    decay
    room temperature

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S. F., Torii, K., Deguchi, T., Sota, T., Setoguchi, A., Nakanishi, H., ... Nakamura, S. (2000). Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth. Applied Physics Letters, 76(12), 1576-1578.

    Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth. / Chichibu, S. F.; Torii, K.; Deguchi, T.; Sota, Takayuki; Setoguchi, A.; Nakanishi, H.; Azuhata, T.; Nakamura, S.

    In: Applied Physics Letters, Vol. 76, No. 12, 20.03.2000, p. 1576-1578.

    Research output: Contribution to journalArticle

    Chichibu, SF, Torii, K, Deguchi, T, Sota, T, Setoguchi, A, Nakanishi, H, Azuhata, T & Nakamura, S 2000, 'Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth', Applied Physics Letters, vol. 76, no. 12, pp. 1576-1578.
    Chichibu SF, Torii K, Deguchi T, Sota T, Setoguchi A, Nakanishi H et al. Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth. Applied Physics Letters. 2000 Mar 20;76(12):1576-1578.
    Chichibu, S. F. ; Torii, K. ; Deguchi, T. ; Sota, Takayuki ; Setoguchi, A. ; Nakanishi, H. ; Azuhata, T. ; Nakamura, S. / Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth. In: Applied Physics Letters. 2000 ; Vol. 76, No. 12. pp. 1576-1578.
    @article{ff81f1e266fb4a2fa2e0defe08b9067d,
    title = "Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth",
    abstract = "Photoreflectance (PR) spectra of high-purity, nearly free-standing GaN substrate were compared with emission and reflectance spectra, which were analyzed based on a model exciton-polariton picture in which A, B, and C free excitons couple simultaneously to an electromagnetic wave. The GaN substrate with reduced dislocation density was prepared by lateral epitaxial overgrowth technique and it exhibited predominant excitonic emissions with the decay time nearly I ns even at room temperature. The transition energies obtained from the PR spectrum agree with the energies of bottlenecks of the excitonic polariton branches. The result means that perturbation-induced change in the dielectric function is mainly due to polaritons. Temperature dependence of the A-exciton energy was well described using a model which assumes Einstein phonons.",
    author = "Chichibu, {S. F.} and K. Torii and T. Deguchi and Takayuki Sota and A. Setoguchi and H. Nakanishi and T. Azuhata and S. Nakamura",
    year = "2000",
    month = "3",
    day = "20",
    language = "English",
    volume = "76",
    pages = "1576--1578",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "12",

    }

    TY - JOUR

    T1 - Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth

    AU - Chichibu, S. F.

    AU - Torii, K.

    AU - Deguchi, T.

    AU - Sota, Takayuki

    AU - Setoguchi, A.

    AU - Nakanishi, H.

    AU - Azuhata, T.

    AU - Nakamura, S.

    PY - 2000/3/20

    Y1 - 2000/3/20

    N2 - Photoreflectance (PR) spectra of high-purity, nearly free-standing GaN substrate were compared with emission and reflectance spectra, which were analyzed based on a model exciton-polariton picture in which A, B, and C free excitons couple simultaneously to an electromagnetic wave. The GaN substrate with reduced dislocation density was prepared by lateral epitaxial overgrowth technique and it exhibited predominant excitonic emissions with the decay time nearly I ns even at room temperature. The transition energies obtained from the PR spectrum agree with the energies of bottlenecks of the excitonic polariton branches. The result means that perturbation-induced change in the dielectric function is mainly due to polaritons. Temperature dependence of the A-exciton energy was well described using a model which assumes Einstein phonons.

    AB - Photoreflectance (PR) spectra of high-purity, nearly free-standing GaN substrate were compared with emission and reflectance spectra, which were analyzed based on a model exciton-polariton picture in which A, B, and C free excitons couple simultaneously to an electromagnetic wave. The GaN substrate with reduced dislocation density was prepared by lateral epitaxial overgrowth technique and it exhibited predominant excitonic emissions with the decay time nearly I ns even at room temperature. The transition energies obtained from the PR spectrum agree with the energies of bottlenecks of the excitonic polariton branches. The result means that perturbation-induced change in the dielectric function is mainly due to polaritons. Temperature dependence of the A-exciton energy was well described using a model which assumes Einstein phonons.

    UR - http://www.scopus.com/inward/record.url?scp=0000062223&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000062223&partnerID=8YFLogxK

    M3 - Article

    VL - 76

    SP - 1576

    EP - 1578

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 12

    ER -