Picosecond absorption recovery of 100 nm GaAs/AlGaAs MQW wires

Atsushi Tackeuchi, Hideki Kitada, Hiroshi Arimoto, Yoshihiro Sugiyama, Tsuguo Inata, Yasuhiro Yamaguchi, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

Research output: Contribution to journalArticle


We have studied narrow multiple quantum-well (MQW) wires using conventional absorption spectroscopy and time-resolved absorption measurements. Wires down to 130 nm were fabricated from MQW's using focused ion-beam lithography and electron cyclotron-resonance chlorine-plasma etching. In this structure, the photoexcited carriers diffuse toward sidewalls and recombine on the sidewall surface. We confirmed from the absorption spectrum of MQW wires that the exciton peak is preserved even in wires 130 nm wide. We show that the excitonic absorption recovery of MQW wires is reduced to 11 ps, preserving excitonic optical nonlinearity.

Original languageEnglish
Pages (from-to)267-269
Number of pages3
JournalSurface Science
Issue number1-3
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Tackeuchi, A., Kitada, H., Arimoto, H., Sugiyama, Y., Inata, T., Yamaguchi, Y., Nakata, Y., Nakamura, S., & Muto, S. (1992). Picosecond absorption recovery of 100 nm GaAs/AlGaAs MQW wires. Surface Science, 267(1-3), 267-269. https://doi.org/10.1016/0039-6028(92)91134-W