Picosecond absorption recovery of 100 nm GaAs/AlGaAs MQW wires

Atsushi Tackeuchi, Hideki Kitada, Hiroshi Arimoto, Yoshihiro Sugiyama, Tsuguo Inata, Yasuhiro Yamaguchi, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

Research output: Contribution to journalArticle

Abstract

We have studied narrow multiple quantum-well (MQW) wires using conventional absorption spectroscopy and time-resolved absorption measurements. Wires down to 130 nm were fabricated from MQW's using focused ion-beam lithography and electron cyclotron-resonance chlorine-plasma etching. In this structure, the photoexcited carriers diffuse toward sidewalls and recombine on the sidewall surface. We confirmed from the absorption spectrum of MQW wires that the exciton peak is preserved even in wires 130 nm wide. We show that the excitonic absorption recovery of MQW wires is reduced to 11 ps, preserving excitonic optical nonlinearity.

Original languageEnglish
Pages (from-to)267-269
Number of pages3
JournalSurface Science
Volume267
Issue number1-3
DOIs
Publication statusPublished - 1992

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Tackeuchi, A., Kitada, H., Arimoto, H., Sugiyama, Y., Inata, T., Yamaguchi, Y., Nakata, Y., Nakamura, S., & Muto, S. (1992). Picosecond absorption recovery of 100 nm GaAs/AlGaAs MQW wires. Surface Science, 267(1-3), 267-269. https://doi.org/10.1016/0039-6028(92)91134-W