Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates

Atsushi Tackeuchi, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, Sotaro Izumi

Research output: Contribution to journalArticle

Abstract

Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.

Original languageEnglish
Pages (from-to)702011-702013
Number of pages3
JournalJapanese journal of applied physics
Volume49
Issue number7 PART 1
DOIs
Publication statusPublished - 2010 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Tackeuchi, A., Yoo, C. H., Kim, T. W., Kwon, Y. H., Kang, T. W., Nukui, T., Fujita, T., Nakazato, Y., Saeki, Y., & Izumi, S. (2010). Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates. Japanese journal of applied physics, 49(7 PART 1), 702011-702013. https://doi.org/10.1143/JJAP.49.070201