Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells

Ryo Yamaguchi, Shin Ichiro Gozu, Teruo Mozume, Yoshitsugu Oyanagi, Mitsunori Uemura, Atsushi Tackeuchi

    Research output: Contribution to journal › Article

    Abstract

    The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.

    Original languageEnglish
    Article number04CM05
    JournalJapanese Journal of Applied Physics
    Volume52
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2013 Apr

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    Semiconductor quantum wells
    quantum wells
    Relaxation time
    room temperature
    Temperature
    relaxation time
    Reflectometers
    Optical devices
    Pumps
    high speed
    pumps
    reflectance
    temperature dependence
    temperature
    probes

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells. / Yamaguchi, Ryo; Gozu, Shin Ichiro; Mozume, Teruo; Oyanagi, Yoshitsugu; Uemura, Mitsunori; Tackeuchi, Atsushi.

    In: Japanese Journal of Applied Physics, Vol. 52, No. 4 PART 2, 04CM05, 04.2013.

    Research output: Contribution to journal › Article

    Yamaguchi, R, Gozu, SI, Mozume, T, Oyanagi, Y, Uemura, M & Tackeuchi, A 2013, 'Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells', Japanese Journal of Applied Physics, vol. 52, no. 4 PART 2, 04CM05. https://doi.org/10.7567/JJAP.52.04CM05
    Yamaguchi R, Gozu SI, Mozume T, Oyanagi Y, Uemura M, Tackeuchi A. Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells. Japanese Journal of Applied Physics. 2013 Apr;52(4 PART 2). 04CM05. https://doi.org/10.7567/JJAP.52.04CM05
    Yamaguchi, Ryo ; Gozu, Shin Ichiro ; Mozume, Teruo ; Oyanagi, Yoshitsugu ; Uemura, Mitsunori ; Tackeuchi, Atsushi. / Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 4 PART 2.
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    abstract = "The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.",
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    AU - Mozume, Teruo

    AU - Oyanagi, Yoshitsugu

    AU - Uemura, Mitsunori

    AU - Tackeuchi, Atsushi

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