Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells

Ryo Yamaguchi; Shin Ichiro Gozu; Teruo Mozume; Yoshitsugu Oyanagi; Mitsunori Uemura; Atsushi Tackeuchi

doi:10.7567/JJAP.52.04CM05

Picosecond carrier spin relaxation in in_0.8Ga _0.2As/AlAs/AlAs_0.56Sb_0.44coupled double quantum wells

Ryo Yamaguchi, Shin Ichiro Gozu, Teruo Mozume, Yoshitsugu Oyanagi, Mitsunori Uemura, Atsushi Tackeuchi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The carrier spin relaxation of In_0.8 Ga_0.2As/AlAs/ AlAs_0.56Sb_0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.

Original language	English
Article number	04CM05
Journal	Japanese journal of applied physics
Volume	52
Issue number	4 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.04CM05
Publication status	Published - 2013 Apr 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells",

abstract = "The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.",

author = "Ryo Yamaguchi and Gozu, {Shin Ichiro} and Teruo Mozume and Yoshitsugu Oyanagi and Mitsunori Uemura and Atsushi Tackeuchi",

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language = "English",

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T1 - Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells

AU - Yamaguchi, Ryo

AU - Gozu, Shin Ichiro

AU - Mozume, Teruo

AU - Oyanagi, Yoshitsugu

AU - Uemura, Mitsunori

AU - Tackeuchi, Atsushi

PY - 2013/4/1

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AB - The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.

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