Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells

Ryo Yamaguchi, Shin Ichiro Gozu, Teruo Mozume, Yoshitsugu Oyanagi, Mitsunori Uemura, Atsushi Tackeuchi

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The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.

Original languageEnglish
Article number04CM05
JournalJapanese journal of applied physics
Issue number4 PART 2
Publication statusPublished - 2013 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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