TY - JOUR
T1 - Picosecond carrier spin relaxation in in0.8Ga 0.2As/AlAs/AlAs0.56Sb0.44coupled double quantum wells
AU - Yamaguchi, Ryo
AU - Gozu, Shin Ichiro
AU - Mozume, Teruo
AU - Oyanagi, Yoshitsugu
AU - Uemura, Mitsunori
AU - Tackeuchi, Atsushi
PY - 2013/4
Y1 - 2013/4
N2 - The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.
AB - The carrier spin relaxation of In0.8 Ga0.2As/AlAs/ AlAs0.56Sb0.44coupled double quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed fast spin relaxation time of 9 ps at room temperature indicates high potential for applications to high-speed optical devices. A negative temperature dependence of spin relaxation time is observed between 100 K and room temperature. The spin relaxation is found to be governed by the Bir-Aronov-Pikus process between 10 and 100 K and by the D'yakonov-Perel' and Elliott-Yafet processes between 100 K and room temperature.
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U2 - 10.7567/JJAP.52.04CM05
DO - 10.7567/JJAP.52.04CM05
M3 - Article
AN - SCOPUS:84880780603
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04CM05
ER -