Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Eizo Miyauchi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

Original languageEnglish
Pages (from-to)L750-L753
JournalJapanese journal of applied physics
Volume28
Issue number5A
DOIs
Publication statusPublished - 1989 May
Externally publishedYes

Keywords

  • Ingaas
  • Picosecond
  • Resonant tunneling

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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