Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Eizo Miyauchi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electrooptic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the 'state-life', that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

Original languageEnglish
Pages (from-to)750-753
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number5
Publication statusPublished - 1989 May
Externally publishedYes

Fingerprint

Resonant tunneling
resonant tunneling
Electrooptical effects
electro-optics
Diodes
sampling
diodes
Sampling
Equivalent circuits
Semiconductor quantum wells
Dynamic response
life (durability)
dynamic response
equivalent circuits
quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling. / Tackeuchi, Atsushi; Inata, Tsuguo; Muto, Shunichi; Miyauchi, Eizo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 28, No. 5, 05.1989, p. 750-753.

Research output: Contribution to journalArticle

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