We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electrooptic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the 'state-life', that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 1989 May|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)