Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Eizo Miyauchi

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13 Citations (Scopus)


We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electrooptic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the 'state-life', that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

Original languageEnglish
Pages (from-to)750-753
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5
Publication statusPublished - 1989 May
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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