Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

Research output: Contribution to journalArticle

Abstract

We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.

Original languageEnglish
Pages (from-to)370-372
Number of pages3
JournalSurface Science
Volume228
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr 1
Externally publishedYes

Fingerprint

Resonant tunneling
resonant tunneling
Molecular beam epitaxy
Diodes
diodes
Electrooptical effects
dynamic response
equivalent circuits
Equivalent circuits
time constant
electro-optics
Dynamic response
waveforms
emitters
Current density
sampling
Doping (additives)
current density
Sampling

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE. / Muto, Shunichi; Tackeuchi, Atsushi; Inata, Tsuguo; Miyauchi, Eizo; Fujii, Toshio.

In: Surface Science, Vol. 228, No. 1-3, 01.04.1990, p. 370-372.

Research output: Contribution to journalArticle

Muto, Shunichi ; Tackeuchi, Atsushi ; Inata, Tsuguo ; Miyauchi, Eizo ; Fujii, Toshio. / Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE. In: Surface Science. 1990 ; Vol. 228, No. 1-3. pp. 370-372.
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