Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Osamu Wada

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e -2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e -1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e -1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

    Original languageEnglish
    Pages (from-to)318-323
    Number of pages6
    JournalPhysica B: Condensed Matter
    Volume272
    Issue number1-4
    DOIs
    Publication statusPublished - 1999 Dec 1

    Fingerprint

    electron spin
    Semiconductor quantum wells
    aluminum gallium arsenides
    quantum wells
    Electrons
    Relaxation processes
    Relaxation time
    Quantum confinement
    relaxation time
    Pumps
    Temperature
    room temperature
    gallium arsenide
    electrons
    pumps
    energy
    probes

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells. / Tackeuchi, Atsushi; Kuroda, Takamasa; Muto, Shunichi; Wada, Osamu.

    In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 318-323.

    Research output: Contribution to journalArticle

    Tackeuchi, Atsushi ; Kuroda, Takamasa ; Muto, Shunichi ; Wada, Osamu. / Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells. In: Physica B: Condensed Matter. 1999 ; Vol. 272, No. 1-4. pp. 318-323.
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    abstract = "The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e -2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e -1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e -1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.",
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    AU - Tackeuchi, Atsushi

    AU - Kuroda, Takamasa

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    AU - Wada, Osamu

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