Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Osamu Wada

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    The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e -2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e -1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e -1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

    Original languageEnglish
    Pages (from-to)318-323
    Number of pages6
    JournalPhysica B: Condensed Matter
    Issue number1-4
    Publication statusPublished - 1999 Dec 1


    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

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