Picosecond signal recovery in type II tunneling bi-quantum well etalon

Atsushi Tackeuchi; Tsuguo Inata; Yoshiaki Nakata; Satoshi Nakamura; Yoshihiro Sugiyama; Shunichi Muto

doi:10.1063/1.108380

Picosecond signal recovery in type II tunneling bi-quantum well etalon

Atsushi Tackeuchi^*, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.

Original language	English
Pages (from-to)	1892-1894
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	16
DOIs	https://doi.org/10.1063/1.108380
Publication status	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.108380

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title = "Picosecond signal recovery in type II tunneling bi-quantum well etalon",

abstract = "We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.",

author = "Atsushi Tackeuchi and Tsuguo Inata and Yoshiaki Nakata and Satoshi Nakamura and Yoshihiro Sugiyama and Shunichi Muto",

year = "1992",

doi = "10.1063/1.108380",

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T1 - Picosecond signal recovery in type II tunneling bi-quantum well etalon

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Nakata, Yoshiaki

AU - Nakamura, Satoshi

AU - Sugiyama, Yoshihiro

AU - Muto, Shunichi

PY - 1992

Y1 - 1992

N2 - We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.

AB - We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Picosecond signal recovery in type II tunneling bi-quantum well etalon

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