Picosecond signal recovery in type II tunneling bi-quantum well etalon

Atsushi Tackeuchi, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

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Abstract

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.

Original languageEnglish
Pages (from-to)1892-1894
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number16
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Tackeuchi, A., Inata, T., Nakata, Y., Nakamura, S., Sugiyama, Y., & Muto, S. (1992). Picosecond signal recovery in type II tunneling bi-quantum well etalon. Applied Physics Letters, 61(16), 1892-1894. https://doi.org/10.1063/1.108380