Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Atsushi Tackeuchi, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

Research output: Contribution to journalConference article

Abstract

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
Publication statusPublished - 1993
Externally publishedYes
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: 1993 May 231993 May 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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