Picosecond spin relaxation in low-temperature-grown GaAs

M. Uemura, K. Honda, Y. Yasue, S. L. Lu, P. Dai, A. Tackeuchi

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4 Citations (Scopus)

Abstract

The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10 K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10 K and 77 K, and that the D'yakonov-Perel' process is effective between 125 K (77 K) and 200 K.

Original languageEnglish
Article number122403
JournalApplied Physics Letters
Volume104
Issue number12
DOIs
Publication statusPublished - 2014 Mar 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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