Picosecond spin relaxation in low-temperature-grown GaAs

M. Uemura, K. Honda, Y. Yasue, S. L. Lu, P. Dai, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10 K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10 K and 77 K, and that the D'yakonov-Perel' process is effective between 125 K (77 K) and 200 K.

    Original languageEnglish
    Article number122403
    JournalApplied Physics Letters
    Volume104
    Issue number12
    DOIs
    Publication statusPublished - 2014 Mar 24

    Fingerprint

    relaxation time
    carrier lifetime
    pumps
    reflectance
    temperature
    probes
    defects
    decay
    polarization

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Picosecond spin relaxation in low-temperature-grown GaAs. / Uemura, M.; Honda, K.; Yasue, Y.; Lu, S. L.; Dai, P.; Tackeuchi, Atsushi.

    In: Applied Physics Letters, Vol. 104, No. 12, 122403, 24.03.2014.

    Research output: Contribution to journalArticle

    Uemura, M. ; Honda, K. ; Yasue, Y. ; Lu, S. L. ; Dai, P. ; Tackeuchi, Atsushi. / Picosecond spin relaxation in low-temperature-grown GaAs. In: Applied Physics Letters. 2014 ; Vol. 104, No. 12.
    @article{f5f966bb55814baa8ac8ff8ed0432797,
    title = "Picosecond spin relaxation in low-temperature-grown GaAs",
    abstract = "The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10 K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10 K and 77 K, and that the D'yakonov-Perel' process is effective between 125 K (77 K) and 200 K.",
    author = "M. Uemura and K. Honda and Y. Yasue and Lu, {S. L.} and P. Dai and Atsushi Tackeuchi",
    year = "2014",
    month = "3",
    day = "24",
    doi = "10.1063/1.4869211",
    language = "English",
    volume = "104",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "12",

    }

    TY - JOUR

    T1 - Picosecond spin relaxation in low-temperature-grown GaAs

    AU - Uemura, M.

    AU - Honda, K.

    AU - Yasue, Y.

    AU - Lu, S. L.

    AU - Dai, P.

    AU - Tackeuchi, Atsushi

    PY - 2014/3/24

    Y1 - 2014/3/24

    N2 - The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10 K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10 K and 77 K, and that the D'yakonov-Perel' process is effective between 125 K (77 K) and 200 K.

    AB - The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10 K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10 K and 77 K, and that the D'yakonov-Perel' process is effective between 125 K (77 K) and 200 K.

    UR - http://www.scopus.com/inward/record.url?scp=84897405714&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84897405714&partnerID=8YFLogxK

    U2 - 10.1063/1.4869211

    DO - 10.1063/1.4869211

    M3 - Article

    VL - 104

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 12

    M1 - 122403

    ER -