Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

Hirotaka Otake; Takamasa Kuroda; Atsushi Tackeuchi; Kazuyoshi Taniguchi; Takako Chinone; Ji Hao Liang; Masataka Kajikawa; Naochika Horio

doi:10.1063/1.2730386

Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

Hirotaka Otake, Takamasa Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τ_s, is found to be proportional to T^-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T^-1.41 at 150-225K.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	1315-1316
Number of pages	2
DOIs	https://doi.org/10.1063/1.2730386
Publication status	Published - 2007 Dec 1
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 2006 Jul 24 → 2006 Jul 28

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country	Austria
City	Vienna
Period	06/7/24 → 06/7/28

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Keywords

Exciton
GaN
Spin
Spin relaxation
Wurtzite

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Otake, H., Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., Liang, J. H., Kajikawa, M., & Horio, N. (2007). Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1315-1316). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730386

Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. / Otake, Hirotaka; Kuroda, Takamasa; Tackeuchi, Atsushi; Taniguchi, Kazuyoshi; Chinone, Takako; Liang, Ji Hao; Kajikawa, Masataka; Horio, Naochika.

Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 1315-1316 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Otake, H, Kuroda, T, Tackeuchi, A, Taniguchi, K, Chinone, T, Liang, JH, Kajikawa, M & Horio, N 2007, Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 1315-1316, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2730386

Otake, Hirotaka ; Kuroda, Takamasa ; Tackeuchi, Atsushi ; Taniguchi, Kazuyoshi ; Chinone, Takako ; Liang, Ji Hao ; Kajikawa, Masataka ; Horio, Naochika. / Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. pp. 1315-1316 (AIP Conference Proceedings).

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abstract = "The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.",

keywords = "Exciton, GaN, Spin, Spin relaxation, Wurtzite",

author = "Hirotaka Otake and Takamasa Kuroda and Atsushi Tackeuchi and Kazuyoshi Taniguchi and Takako Chinone and Liang, {Ji Hao} and Masataka Kajikawa and Naochika Horio",

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AU - Otake, Hirotaka

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AU - Taniguchi, Kazuyoshi

AU - Chinone, Takako

AU - Liang, Ji Hao

AU - Kajikawa, Masataka

AU - Horio, Naochika

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N2 - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

AB - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

KW - Exciton

KW - GaN

KW - Spin

KW - Spin relaxation

KW - Wurtzite

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Access to Document

10.1063/1.2730386