Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

Hirotaka Otake; Takamasa Kuroda; Atsushi Tackeuchi; Kazuyoshi Taniguchi; Takako Chinone; Ji Hao Liang; Masataka Kajikawa; Naochika Horio

doi:10.1063/1.2730386

Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

Hirotaka Otake^*, Takamasa Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τ_s, is found to be proportional to T^-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T^-1.41 at 150-225K.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	1315-1316
Number of pages	2
DOIs	https://doi.org/10.1063/1.2730386
Publication status	Published - 2007 Dec 1
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 2006 Jul 24 → 2006 Jul 28

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	06/7/24 → 06/7/28

Keywords

Exciton
GaN
Spin
Spin relaxation
Wurtzite

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2730386

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Otake, H., Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., Liang, J. H., Kajikawa, M., & Horio, N. (2007). Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1315-1316). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730386

Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. / Otake, Hirotaka; Kuroda, Takamasa; Tackeuchi, Atsushi; Taniguchi, Kazuyoshi; Chinone, Takako; Liang, Ji Hao; Kajikawa, Masataka; Horio, Naochika.

Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 1315-1316 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Otake, H, Kuroda, T, Tackeuchi, A, Taniguchi, K, Chinone, T, Liang, JH, Kajikawa, M & Horio, N 2007, Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 1315-1316, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 06/7/24. https://doi.org/10.1063/1.2730386

Otake, Hirotaka ; Kuroda, Takamasa ; Tackeuchi, Atsushi ; Taniguchi, Kazuyoshi ; Chinone, Takako ; Liang, Ji Hao ; Kajikawa, Masataka ; Horio, Naochika. / Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. pp. 1315-1316 (AIP Conference Proceedings).

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title = "Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN",

abstract = "The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.",

keywords = "Exciton, GaN, Spin, Spin relaxation, Wurtzite",

author = "Hirotaka Otake and Takamasa Kuroda and Atsushi Tackeuchi and Kazuyoshi Taniguchi and Takako Chinone and Liang, {Ji Hao} and Masataka Kajikawa and Naochika Horio",

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T1 - Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

AU - Otake, Hirotaka

AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

AU - Taniguchi, Kazuyoshi

AU - Chinone, Takako

AU - Liang, Ji Hao

AU - Kajikawa, Masataka

AU - Horio, Naochika

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

AB - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

KW - Exciton

KW - GaN

KW - Spin

KW - Spin relaxation

KW - Wurtzite

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BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

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Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

Abstract

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