Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN

Hirotaka Otake, Takamasa Kuroda, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    Abstract

    The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages1315-1316
    Number of pages2
    Volume893
    DOIs
    Publication statusPublished - 2007
    Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna
    Duration: 2006 Jul 24 → 2006 Jul 28

    Other

    Other28th International Conference on the Physics of Semiconductors, ICPS 2006
    CityVienna
    Period06/7/24 → 06/7/28

    Fingerprint

    wurtzite
    excitons
    relaxation time
    pumps
    reflectance
    temperature dependence
    probes
    temperature

    Keywords

    • Exciton
    • GaN
    • Spin
    • Spin relaxation
    • Wurtzite

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Otake, H., Kuroda, T., Tackeuchi, A., Taniguchi, K., Chinone, T., Liang, J. H., ... Horio, N. (2007). Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. In AIP Conference Proceedings (Vol. 893, pp. 1315-1316) https://doi.org/10.1063/1.2730386

    Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. / Otake, Hirotaka; Kuroda, Takamasa; Tackeuchi, Atsushi; Taniguchi, Kazuyoshi; Chinone, Takako; Liang, Ji Hao; Kajikawa, Masataka; Horio, Naochika.

    AIP Conference Proceedings. Vol. 893 2007. p. 1315-1316.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    Otake, H, Kuroda, T, Tackeuchi, A, Taniguchi, K, Chinone, T, Liang, JH, Kajikawa, M & Horio, N 2007, Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. in AIP Conference Proceedings. vol. 893, pp. 1315-1316, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, 06/7/24. https://doi.org/10.1063/1.2730386
    Otake H, Kuroda T, Tackeuchi A, Taniguchi K, Chinone T, Liang JH et al. Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. In AIP Conference Proceedings. Vol. 893. 2007. p. 1315-1316 https://doi.org/10.1063/1.2730386
    Otake, Hirotaka ; Kuroda, Takamasa ; Tackeuchi, Atsushi ; Taniguchi, Kazuyoshi ; Chinone, Takako ; Liang, Ji Hao ; Kajikawa, Masataka ; Horio, Naochika. / Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN. AIP Conference Proceedings. Vol. 893 2007. pp. 1315-1316
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    abstract = "The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.",
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    AU - Otake, Hirotaka

    AU - Kuroda, Takamasa

    AU - Tackeuchi, Atsushi

    AU - Taniguchi, Kazuyoshi

    AU - Chinone, Takako

    AU - Liang, Ji Hao

    AU - Kajikawa, Masataka

    AU - Horio, Naochika

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    N2 - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

    AB - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to spin relaxation times of 1.40-1.14 ps. The spin relaxation time, τs, is found to be proportional to T-0.175, where T is the temperature. This temperature dependence is quite weak compared with that of A-band free excitons showing τ ≅ T-1.41 at 150-225K.

    KW - Exciton

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    KW - Spin

    KW - Spin relaxation

    KW - Wurtzite

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