Abstract
The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.
| Original language | English |
|---|---|
| Pages (from-to) | 4303-4306 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 3 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan Duration: 2006 Aug 15 → 2006 Aug 18 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Tackeuchi, A., Otake, H., Fujita, T., Kuroda, T., Chinone, T., Liang, J. H., & Kajikawa, M. (2006). Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 3(12), 4303-4306. https://doi.org/10.1002/pssc.200672885