Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN

A. Tackeuchi; H. Otake; T. Fujita; T. Kuroda; T. Chinone; J. H. Liang; M. Kajikawa

doi:10.1002/pssc.200672885

Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN

A. Tackeuchi^*, H. Otake, T. Fujita, T. Kuroda, T. Chinone, J. H. Liang, M. Kajikawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T^-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.

Original language	English
Pages (from-to)	4303-4306
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
Issue number	12
DOIs	https://doi.org/10.1002/pssc.200672885
Publication status	Published - 2006
Event	4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV - Sendai, Japan Duration: 2006 Aug 15 → 2006 Aug 18

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200672885

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title = "Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN",

abstract = "The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.",

author = "A. Tackeuchi and H. Otake and T. Fujita and T. Kuroda and T. Chinone and Liang, {J. H.} and M. Kajikawa",

year = "2006",

doi = "10.1002/pssc.200672885",

language = "English",

volume = "3",

pages = "4303--4306",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "12",

note = "4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV ; Conference date: 15-08-2006 Through 18-08-2006",

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TY - JOUR

T1 - Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN

AU - Tackeuchi, A.

AU - Otake, H.

AU - Fujita, T.

AU - Kuroda, T.

AU - Chinone, T.

AU - Liang, J. H.

AU - Kajikawa, M.

PY - 2006

Y1 - 2006

N2 - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.

AB - The spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15-50 K have a single exponential component corresponding to the electron spin relaxation time of 1.40-1.14 ps. These spin relaxation times are slightly longer than those of the A-band free excitons of 0.47-0.25 ps in GaN at 150-225 K. The spin relaxation time is found to be proportional to T-0.175, where T is the temperature. This weak temperature dependence indicates that the main spin relaxation mechanism is the Bir-Aronov-Pikus process.

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U2 - 10.1002/pssc.200672885

DO - 10.1002/pssc.200672885

M3 - Conference article

AN - SCOPUS:49549125666

VL - 3

SP - 4303

EP - 4306

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 12

T2 - 4th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors, PASPS-IV

Y2 - 15 August 2006 through 18 August 2006

ER -

Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN

Abstract

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