Planar-doping of molecular beam epitaxy grown ZnSe with plasma-excited nitrogen

Shigeyuki Matsumoto, Hiroyuki Tosaka, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5 × 1017 cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume32
Issue number2 B
Publication statusPublished - 1993
Externally publishedYes

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Molecular beam epitaxy
Hole concentration
molecular beam epitaxy
Doping (additives)
Nitrogen
Plasmas
nitrogen
photoluminescence
Capacitance measurement
Photoluminescence spectroscopy
Voltage measurement
electrical measurement
Photoluminescence
capacitance
spectroscopy
Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Planar-doping of molecular beam epitaxy grown ZnSe with plasma-excited nitrogen. / Matsumoto, Shigeyuki; Tosaka, Hiroyuki; Yoshida, Takashi; Kobayashi, Masakazu; Yoshikawa, Akihiko.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 32, No. 2 B, 1993, p. 229-232.

Research output: Contribution to journalArticle

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