Plasma-assisted metalorganic chemical vapor deposition of ZnSe films

Naoki Mino, Masakazu Kobayashi, Makoto Konagai, Kiyoshi Takahashi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

ZnSe thin films were grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). Plasma-assisted MOCVD is a technique combining rf glow discharge decomposition (at 13.56 MHz) with conventional metalorganic chemical vapor deposition. This process may offer several advantages such as low-temperature growth, high chemical reactivity, cleaning effect of substrate surface, and good surface morphology. The metalorganic sources used were diethylzinc and diethylselenide. The epitaxial films were obtained at the low substrate temperature of 250 °C by plasma-assisted MOCVD. The grown films showed excellent surface morphology and uniformity over a large area. These films were applied to Al/ZnSe:Mn/ITO (indium tin oxide) dc-operated electroluminescent cells. As a manganese source, di-π-cyclopentadienyl manganese [(C5H5)2Mn] was successfully used.

Original languageEnglish
Pages (from-to)2216-2221
Number of pages6
JournalJournal of Applied Physics
Volume59
Issue number6
DOIs
Publication statusPublished - 1986
Externally publishedYes

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metalorganic chemical vapor deposition
manganese
ITO (semiconductors)
glow discharges
indium oxides
cleaning
tin oxides
reactivity
decomposition
thin films
cells
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Plasma-assisted metalorganic chemical vapor deposition of ZnSe films. / Mino, Naoki; Kobayashi, Masakazu; Konagai, Makoto; Takahashi, Kiyoshi.

In: Journal of Applied Physics, Vol. 59, No. 6, 1986, p. 2216-2221.

Research output: Contribution to journalArticle

Mino, Naoki ; Kobayashi, Masakazu ; Konagai, Makoto ; Takahashi, Kiyoshi. / Plasma-assisted metalorganic chemical vapor deposition of ZnSe films. In: Journal of Applied Physics. 1986 ; Vol. 59, No. 6. pp. 2216-2221.
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