Plasma-enhanced diamond nucleation on Si

Masahiro Katoh, Makoto Aoki, Hiroshi Kawarada

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Both positive and negative bias effects on the nucleation of chemical vapor deposition (CVD) diamond have been investigated thoroughly in microwave plasma. Prior to the conventional microwave plasma CVD growth of diamond, positive or negative biasing pretreatment has been performed. The pretreatment conditions were varied in terms of substrate bias voltage (—100~ + 100 V), pretreatment pressure (0.2~15 Torr), and methane fraction (2 ~40%) in hydrogen source gas. It is found that the positive substrate bias as well as the negative bias are effective for the nucleation of diamond.

Original languageEnglish
Pages (from-to)L194-L196
JournalJapanese journal of applied physics
Volume33
Issue number2A
DOIs
Publication statusPublished - 1994 Feb

Keywords

  • Chemical vapor deposition
  • Crystal growth
  • Diamond
  • Nucleation
  • Plasma
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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