Plasma-enhanced diamond nucleation on Si

Masahiro Katoh, Makoto Aoki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    36 Citations (Scopus)

    Abstract

    Both positive and negative bias effects on the nucleation of chemical vapor deposition (CVD) diamond have been investigated thoroughly in microwave plasma. Prior to the conventional microwave plasma CVD growth of diamond, positive or negative biasing pretreatment has been performed. The pretreatment conditions were varied in terms of substrate bias voltage (-100 to approximately +100 V), pretreatment pressure (0.2 to approximately 15 Torr), and methane fraction (2 to approximately 40%) in hydrogen source gas. It is found that the positive substrate bias as well as the negative bias are effective for the nucleation of diamond.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume33
    Issue number2 A
    Publication statusPublished - 1994 Feb 1

    Fingerprint

    Diamonds
    Nucleation
    diamonds
    nucleation
    pretreatment
    Plasmas
    Chemical vapor deposition
    Microwaves
    vapor deposition
    Substrates
    Bias voltage
    microwaves
    Methane
    Hydrogen
    methane
    Gases
    electric potential
    hydrogen
    gases

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Plasma-enhanced diamond nucleation on Si. / Katoh, Masahiro; Aoki, Makoto; Kawarada, Hiroshi.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 33, No. 2 A, 01.02.1994.

    Research output: Contribution to journalArticle

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