Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300°C

K. Kumakura, Toshiki Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have fabricated Pnp AlGaN/GaN heterojunction bipolar transistors and investigated their common-emitter current-voltage (I-V) characteristics at the temperatures from room temperature to 300°C. Good saturation properties were observed in their common-emitter I-V characteristics. The current gain of 20 at room temperature increased with elevating the temperature. The maximum current gain was as high as 71 at 300°C with the collector current from 20 to 200 μA. This increase in current gain is ascribed to the enhancement in the hole injection efficiency from the p-AlGaN emitter to the n-GaN base as well as the reduction of the device resistance and the improved Ohmic characteristics of the subcollector. These results indicate that PnP HBTs have the potential for high temperature operation.

Original languageEnglish
Pages (from-to)443-446
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume194
Issue number2 SPEC.
DOIs
Publication statusPublished - 2002 Dec
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
emitters
High temperature operations
Temperature
room temperature
accumulators
aluminum gallium nitride
injection
Electric potential
saturation
temperature
augmentation
electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300°C. / Kumakura, K.; Makimoto, Toshiki; Kobayashi, N.

In: Physica Status Solidi (A) Applied Research, Vol. 194, No. 2 SPEC., 12.2002, p. 443-446.

Research output: Contribution to journalArticle

@article{2f7fa99bffe74a69a7266f78ec7a9c32,
title = "Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300°C",
abstract = "We have fabricated Pnp AlGaN/GaN heterojunction bipolar transistors and investigated their common-emitter current-voltage (I-V) characteristics at the temperatures from room temperature to 300°C. Good saturation properties were observed in their common-emitter I-V characteristics. The current gain of 20 at room temperature increased with elevating the temperature. The maximum current gain was as high as 71 at 300°C with the collector current from 20 to 200 μA. This increase in current gain is ascribed to the enhancement in the hole injection efficiency from the p-AlGaN emitter to the n-GaN base as well as the reduction of the device resistance and the improved Ohmic characteristics of the subcollector. These results indicate that PnP HBTs have the potential for high temperature operation.",
author = "K. Kumakura and Toshiki Makimoto and N. Kobayashi",
year = "2002",
month = "12",
doi = "10.1002/1521-396X(200212)194:2<443::AID-PSSA443>3.0.CO;2-N",
language = "English",
volume = "194",
pages = "443--446",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "2 SPEC.",

}

TY - JOUR

T1 - Pnp AlGaN/GaN heterojunction bipolar transistors operating at 300°C

AU - Kumakura, K.

AU - Makimoto, Toshiki

AU - Kobayashi, N.

PY - 2002/12

Y1 - 2002/12

N2 - We have fabricated Pnp AlGaN/GaN heterojunction bipolar transistors and investigated their common-emitter current-voltage (I-V) characteristics at the temperatures from room temperature to 300°C. Good saturation properties were observed in their common-emitter I-V characteristics. The current gain of 20 at room temperature increased with elevating the temperature. The maximum current gain was as high as 71 at 300°C with the collector current from 20 to 200 μA. This increase in current gain is ascribed to the enhancement in the hole injection efficiency from the p-AlGaN emitter to the n-GaN base as well as the reduction of the device resistance and the improved Ohmic characteristics of the subcollector. These results indicate that PnP HBTs have the potential for high temperature operation.

AB - We have fabricated Pnp AlGaN/GaN heterojunction bipolar transistors and investigated their common-emitter current-voltage (I-V) characteristics at the temperatures from room temperature to 300°C. Good saturation properties were observed in their common-emitter I-V characteristics. The current gain of 20 at room temperature increased with elevating the temperature. The maximum current gain was as high as 71 at 300°C with the collector current from 20 to 200 μA. This increase in current gain is ascribed to the enhancement in the hole injection efficiency from the p-AlGaN emitter to the n-GaN base as well as the reduction of the device resistance and the improved Ohmic characteristics of the subcollector. These results indicate that PnP HBTs have the potential for high temperature operation.

UR - http://www.scopus.com/inward/record.url?scp=0036960113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036960113&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200212)194:2<443::AID-PSSA443>3.0.CO;2-N

DO - 10.1002/1521-396X(200212)194:2<443::AID-PSSA443>3.0.CO;2-N

M3 - Article

AN - SCOPUS:0036960113

VL - 194

SP - 443

EP - 446

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2 SPEC.

ER -