Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

Original languageEnglish
Pages (from-to)2338-2340
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Doping (additives)
Metallorganic vapor phase epitaxy
Sheet resistance
Hall effect
Current voltage characteristics
Nitrides
low resistance
vapor phase epitaxy
Degradation
accumulators
Crystals
nitrides
degradation
electric potential
crystals

Keywords

  • Base sheet resistance
  • Heterojunctlon bipolar transistor
  • InGaN
  • Pnp

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)",
abstract = "We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.",
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T1 - Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

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N2 - We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

AB - We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

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