Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

Kazuhide Kumakura; Toshiki Makimoto

doi:10.1143/JJAP.46.2338

Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

Kazuhide Kumakura^*, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 10¹⁹ o 2 × 10²⁰ cm^-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm^-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 10²⁰ cm^-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

Original language	English
Pages (from-to)	2338-2340
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2338
Publication status	Published - 2007 Apr 24
Externally published	Yes

Keywords

Base sheet resistance
Heterojunctlon bipolar transistor
InGaN
Pnp

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.2338

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title = "Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)",

abstract = "We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.",

keywords = "Base sheet resistance, Heterojunctlon bipolar transistor, InGaN, Pnp",

author = "Kazuhide Kumakura and Toshiki Makimoto",

year = "2007",

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doi = "10.1143/JJAP.46.2338",

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T1 - Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

PY - 2007/4/24

Y1 - 2007/4/24

N2 - We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

AB - We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

KW - Base sheet resistance

KW - Heterojunctlon bipolar transistor

KW - InGaN

KW - Pnp

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DO - 10.1143/JJAP.46.2338

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 B

ER -

Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

Abstract

Keywords

ASJC Scopus subject areas

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