Point defects in high purity silica induced by high-dose gamma irradiation

Yuryo Sakurai, Kaya Nagasawa, Hiroyuki Nishikawa, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    37 Citations (Scopus)

    Abstract

    The defects induced by high-dose (10 MGy) gamma irradiation ( 60Co) are studied in various types of high-purity silica glasses [including synthetic crystal (α-quartz)]. While the defects induced by gamma irradiation of up to 1 MGy have been reported to be generated through the bond breaking of manufacturing-method-dependent point defect sites (precursors), such precursor dependency disappears or at least weakens in the defects induced by 10 MGy gamma irradiation. Electron spin resonance, optical absorption, and luminescence investigations suggest that at high-dose irradiation the defects are created mainly by radiolysis or bond breaking, and associated oxygen diffusion occurred at silicon-oxygen bonds other than at point defect sites. Crystalline α-quartz shows much higher radiation resistivity than amorphous silica glasses, suggesting that strained silicon-oxygen bonds are the breaking sites.

    Original languageEnglish
    Pages (from-to)1372-1377
    Number of pages6
    JournalJournal of Applied Physics
    Volume75
    Issue number3
    DOIs
    Publication statusPublished - 1994

    Fingerprint

    point defects
    purity
    silicon dioxide
    dosage
    irradiation
    defects
    silica glass
    oxygen
    silicon
    quartz crystals
    radiolysis
    electron paramagnetic resonance
    optical absorption
    manufacturing
    quartz
    luminescence
    electrical resistivity
    radiation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Point defects in high purity silica induced by high-dose gamma irradiation. / Sakurai, Yuryo; Nagasawa, Kaya; Nishikawa, Hiroyuki; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 75, No. 3, 1994, p. 1372-1377.

    Research output: Contribution to journalArticle

    Sakurai, Yuryo ; Nagasawa, Kaya ; Nishikawa, Hiroyuki ; Ohki, Yoshimichi. / Point defects in high purity silica induced by high-dose gamma irradiation. In: Journal of Applied Physics. 1994 ; Vol. 75, No. 3. pp. 1372-1377.
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