Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

Masashi Suzuki, Takahiko Yanagitani, Hiroyuki Odagawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film.

Original languageEnglish
Article number172905
JournalApplied Physics Letters
Volume104
Issue number17
DOIs
Publication statusPublished - 2014 Apr 28
Externally publishedYes

Fingerprint

polarity
resonators
ion beams
harmonics
irradiation
acoustics
inversions
acoustic resonance
wurtzite
negative ions
ion sources
buffers
cathodes
sputtering
retarding
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators. / Suzuki, Masashi; Yanagitani, Takahiko; Odagawa, Hiroyuki.

In: Applied Physics Letters, Vol. 104, No. 17, 172905, 28.04.2014.

Research output: Contribution to journalArticle

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