Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics

Toshiki Makimoto, K. Kumakura, N. Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We propose a new method to evaluate the polarization charge density induced at hetero-interfaces using capacitance-voltage characteristics of p-n heterojunctions and have applied this method to p-GaN/n-AlGaN heterojunction diodes. This method uses p-n heterojunction structures instead of undoped ones, so the obtained result is less influenced by background impurities or deep levels. Furthermore, it is possible to evaluate the negative polarization charge densities for GaN on top of AlGaN heterostructures. The experimental results indicate that the negative polarization charges with their densities more than 5 × 10 12 cm -2 are induced at the GaN/AlGaN hetero-interfaces for the Al mole fractions above 11%.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages334-337
Number of pages4
Edition1
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

Other

Other2nd International Workshop on Nitride Semiconductors, IWN 2002
CountryGermany
CityAachen
Period02/7/2202/7/25

Fingerprint

capacitance-voltage characteristics
Charge density
Heterojunctions
heterojunctions
Capacitance
Polarization
Electric potential
polarization
diodes
impurities
Diodes
Impurities
aluminum gallium nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics. / Makimoto, Toshiki; Kumakura, K.; Kobayashi, N.

Physica Status Solidi C: Conferences. 1. ed. 2002. p. 334-337.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T, Kumakura, K & Kobayashi, N 2002, Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics. in Physica Status Solidi C: Conferences. 1 edn, pp. 334-337, 2nd International Workshop on Nitride Semiconductors, IWN 2002, Aachen, Germany, 02/7/22. https://doi.org/10.1002/pssc.200390056
Makimoto, Toshiki ; Kumakura, K. ; Kobayashi, N. / Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics. Physica Status Solidi C: Conferences. 1. ed. 2002. pp. 334-337
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