Polarization-insensitive InGaAsP/InP vertical coupler filter with deep grating by five-step MOVPE growth

Masayoshi Horita, Tomonori Yazaki, Shinsuke Tanaka, Yuichi Matsushima

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4 Citations (Scopus)

Abstract

A novel fabrication technique to introduce a deep grating in a vertical coupler filter was studied in order to realize a polarization-insensitive semiconductor optical add and drop multiplexing device with low crosstalk characteristics. The process of fabricating the vertical coupler filter, consisting of InGaAsP quasi-square waveguides buried in InP and an InGaAsP/InP grating between the waveguides, is described. Devices with a grating having a depth of 200 nm were fabricated by a five-step metal organic vapor-phase epitaxy (MOVPE) process accompanied by reactive ion etching (RIE) and wet etching. The deep grating was formed by RIE, and was realized by optimizing surface treatment prior to MOVPE over-growth and growth conditions. The diffraction efficiency of the filter was successfully improved, and an extremely low crosstalk of -36 dB was achieved.

Original languageEnglish
Pages (from-to)693-698
Number of pages6
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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