Polarization-inverted multilayered pure shear mode AlN film resonator

Masashi Suzuki, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). caxis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k15 was determined to be 0.05 and this value is 71 % of the single crystalline AlN. We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.

Original languageEnglish
Title of host publicationIEEE International Ultrasonics Symposium, IUS
Number of pages4
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
Duration: 2011 Oct 182011 Oct 21


Other2011 IEEE International Ultrasonics Symposium, IUS 2011
CountryUnited States
CityOrlando, FL



  • AlN
  • c-axis parallel films
  • Polarizationinverted multi-layer films
  • pure shear mode

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Suzuki, M., & Yanagitani, T. (2011). Polarization-inverted multilayered pure shear mode AlN film resonator. In IEEE International Ultrasonics Symposium, IUS (pp. 312-315). [6293063] https://doi.org/10.1109/ULTSYM.2011.0075