Polarization-inverted multilayered pure shear mode AlN film resonator

Masashi Suzuki, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). caxis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k15 was determined to be 0.05 and this value is 71 % of the single crystalline AlN. We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.

Original languageEnglish
Title of host publicationIEEE International Ultrasonics Symposium, IUS
Pages312-315
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
Duration: 2011 Oct 182011 Oct 21

Other

Other2011 IEEE International Ultrasonics Symposium, IUS 2011
CountryUnited States
CityOrlando, FL
Period11/10/1811/10/21

Fingerprint

resonators
shear
polarization
ion beams
irradiation
longitudinal waves
S waves
crystal growth
film thickness

Keywords

  • AlN
  • c-axis parallel films
  • Polarizationinverted multi-layer films
  • pure shear mode

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Suzuki, M., & Yanagitani, T. (2011). Polarization-inverted multilayered pure shear mode AlN film resonator. In IEEE International Ultrasonics Symposium, IUS (pp. 312-315). [6293063] https://doi.org/10.1109/ULTSYM.2011.0075

Polarization-inverted multilayered pure shear mode AlN film resonator. / Suzuki, Masashi; Yanagitani, Takahiko.

IEEE International Ultrasonics Symposium, IUS. 2011. p. 312-315 6293063.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suzuki, M & Yanagitani, T 2011, Polarization-inverted multilayered pure shear mode AlN film resonator. in IEEE International Ultrasonics Symposium, IUS., 6293063, pp. 312-315, 2011 IEEE International Ultrasonics Symposium, IUS 2011, Orlando, FL, United States, 11/10/18. https://doi.org/10.1109/ULTSYM.2011.0075
Suzuki M, Yanagitani T. Polarization-inverted multilayered pure shear mode AlN film resonator. In IEEE International Ultrasonics Symposium, IUS. 2011. p. 312-315. 6293063 https://doi.org/10.1109/ULTSYM.2011.0075
Suzuki, Masashi ; Yanagitani, Takahiko. / Polarization-inverted multilayered pure shear mode AlN film resonator. IEEE International Ultrasonics Symposium, IUS. 2011. pp. 312-315
@inproceedings{1edbd43b212f459bbea700ecdd5223ad,
title = "Polarization-inverted multilayered pure shear mode AlN film resonator",
abstract = "c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). caxis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k15 was determined to be 0.05 and this value is 71 {\%} of the single crystalline AlN. We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.",
keywords = "AlN, c-axis parallel films, Polarizationinverted multi-layer films, pure shear mode",
author = "Masashi Suzuki and Takahiko Yanagitani",
year = "2011",
doi = "10.1109/ULTSYM.2011.0075",
language = "English",
isbn = "9781457712531",
pages = "312--315",
booktitle = "IEEE International Ultrasonics Symposium, IUS",

}

TY - GEN

T1 - Polarization-inverted multilayered pure shear mode AlN film resonator

AU - Suzuki, Masashi

AU - Yanagitani, Takahiko

PY - 2011

Y1 - 2011

N2 - c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). caxis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k15 was determined to be 0.05 and this value is 71 % of the single crystalline AlN. We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.

AB - c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). caxis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k15 was determined to be 0.05 and this value is 71 % of the single crystalline AlN. We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.

KW - AlN

KW - c-axis parallel films

KW - Polarizationinverted multi-layer films

KW - pure shear mode

UR - http://www.scopus.com/inward/record.url?scp=84869013222&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869013222&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2011.0075

DO - 10.1109/ULTSYM.2011.0075

M3 - Conference contribution

AN - SCOPUS:84869013222

SN - 9781457712531

SP - 312

EP - 315

BT - IEEE International Ultrasonics Symposium, IUS

ER -