Polarized Raman spectra in GaN

T. Azuhata, Takayuki Sota, K. Suzuki, S. Nakamura

    Research output: Contribution to journalArticle

    321 Citations (Scopus)

    Abstract

    We have measured polarized Raman spectra in a 2.0 μm GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm-1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as ε⊥0 = 9.28 and ε∥0 = 10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.

    Original languageEnglish
    JournalJournal of Physics Condensed Matter
    Volume7
    Issue number10
    DOIs
    Publication statusPublished - 1995 Mar 6

    Fingerprint

    Phonons
    Raman scattering
    phonons
    Raman spectra
    Aluminum Oxide
    Epitaxial layers
    Sapphire
    sapphire
    Permittivity
    permittivity
    symmetry
    Substrates
    Direction compound

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Polarized Raman spectra in GaN. / Azuhata, T.; Sota, Takayuki; Suzuki, K.; Nakamura, S.

    In: Journal of Physics Condensed Matter, Vol. 7, No. 10, 06.03.1995.

    Research output: Contribution to journalArticle

    Azuhata, T. ; Sota, Takayuki ; Suzuki, K. ; Nakamura, S. / Polarized Raman spectra in GaN. In: Journal of Physics Condensed Matter. 1995 ; Vol. 7, No. 10.
    @article{9bfeea8fab804b28a94ed44b2a3c007e,
    title = "Polarized Raman spectra in GaN",
    abstract = "We have measured polarized Raman spectra in a 2.0 μm GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm-1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as ε⊥0 = 9.28 and ε∥0 = 10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.",
    author = "T. Azuhata and Takayuki Sota and K. Suzuki and S. Nakamura",
    year = "1995",
    month = "3",
    day = "6",
    doi = "10.1088/0953-8984/7/10/002",
    language = "English",
    volume = "7",
    journal = "Journal of Physics Condensed Matter",
    issn = "0953-8984",
    publisher = "IOP Publishing Ltd.",
    number = "10",

    }

    TY - JOUR

    T1 - Polarized Raman spectra in GaN

    AU - Azuhata, T.

    AU - Sota, Takayuki

    AU - Suzuki, K.

    AU - Nakamura, S.

    PY - 1995/3/6

    Y1 - 1995/3/6

    N2 - We have measured polarized Raman spectra in a 2.0 μm GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm-1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as ε⊥0 = 9.28 and ε∥0 = 10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.

    AB - We have measured polarized Raman spectra in a 2.0 μm GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm-1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as ε⊥0 = 9.28 and ε∥0 = 10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.

    UR - http://www.scopus.com/inward/record.url?scp=0029637553&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0029637553&partnerID=8YFLogxK

    U2 - 10.1088/0953-8984/7/10/002

    DO - 10.1088/0953-8984/7/10/002

    M3 - Article

    VL - 7

    JO - Journal of Physics Condensed Matter

    JF - Journal of Physics Condensed Matter

    SN - 0953-8984

    IS - 10

    ER -