Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer

Ye Du*, T. Furubayashi, Y. K. Takahashi, Y. Sakuraba, K. Hono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

Original languageEnglish
Article number7119594
JournalIEEE Transactions on Magnetics
Volume51
Issue number11
DOIs
Publication statusPublished - 2015 Nov 1
Externally publishedYes

Keywords

  • CPP-GMR
  • Heusler alloy
  • polycrystals
  • read head sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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