Polycrystalline silicon film formation at low temperature using a microcrystalline silicon film

Kenji Nakazawa, Keiji Tanaka, Noriyoshi Yamauchi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Polycrystalline silicon (polysilicon) films are formed from the recrystallization of microcrystalline silicon films with different crystalline nucleus densities. The films are deposited by plasma CVD using a gas mixture of SiH2F2, SiH4, and H2. The SiH2F2 flow rate can successfully control the crystalline nucleus density of an as-deposited film. The recrystallization is carried out by annealing at 600°C. The TEM observation shows that recrystallization proceeds from the nucleus until the neighboring grains face each other. Therefore, the grain size in the annealed films and the field effect mobility of thin film transistors using polysilicon films completely depend on the crystalline nucleus density in the starting films. The largest grain sizes and highest field effect mobilities can be obtained from microcrystalline silicon films with the lowest nucleus densities.

Original languageEnglish
Pages (from-to)569-572
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number4
Publication statusPublished - 1989 Apr
Externally publishedYes

Fingerprint

Microcrystalline silicon
silicon films
Polysilicon
nuclei
Temperature
grain size
Crystalline materials
gas mixtures
Plasma CVD
transistors
flow velocity
vapor deposition
Thin film transistors
transmission electron microscopy
annealing
Gas mixtures
thin films
Crystallization
Flow rate
Annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Tanaka, Keiji

AU - Yamauchi, Noriyoshi

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N2 - Polycrystalline silicon (polysilicon) films are formed from the recrystallization of microcrystalline silicon films with different crystalline nucleus densities. The films are deposited by plasma CVD using a gas mixture of SiH2F2, SiH4, and H2. The SiH2F2 flow rate can successfully control the crystalline nucleus density of an as-deposited film. The recrystallization is carried out by annealing at 600°C. The TEM observation shows that recrystallization proceeds from the nucleus until the neighboring grains face each other. Therefore, the grain size in the annealed films and the field effect mobility of thin film transistors using polysilicon films completely depend on the crystalline nucleus density in the starting films. The largest grain sizes and highest field effect mobilities can be obtained from microcrystalline silicon films with the lowest nucleus densities.

AB - Polycrystalline silicon (polysilicon) films are formed from the recrystallization of microcrystalline silicon films with different crystalline nucleus densities. The films are deposited by plasma CVD using a gas mixture of SiH2F2, SiH4, and H2. The SiH2F2 flow rate can successfully control the crystalline nucleus density of an as-deposited film. The recrystallization is carried out by annealing at 600°C. The TEM observation shows that recrystallization proceeds from the nucleus until the neighboring grains face each other. Therefore, the grain size in the annealed films and the field effect mobility of thin film transistors using polysilicon films completely depend on the crystalline nucleus density in the starting films. The largest grain sizes and highest field effect mobilities can be obtained from microcrystalline silicon films with the lowest nucleus densities.

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