Polysilicon Thin-Film Transistors with Channel Length and Width Comparable to or Smaller than the Grain Size of the Thin Film

Noriyoshi Yamauchi, Jean Jacques J. Hajjar, Rafael Reif

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body.

Original languageEnglish
Pages (from-to)55-60
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume38
Issue number1
DOIs
Publication statusPublished - 1991 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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