Abstract
We describe the formation of nanopatterns on an electroactive polythiophene precursor (polyterthiophene methylmethacrylate, P3T) film using a current-sensing atomic force microscopy (CS-AFM) technique. Patterning parameters such as applied bias voltages, sweep duration, and scan rate were adapted for the nanolithographic electrochemical patterning process. The formation of nanopatterns on the film was mainly attributed to the electrochemical cross-linking and oxidation process of the terthiophene units. This is related to the electron transport process under an applied electric field and mass transfer due to Joule heating generated in a localized area from the tip. To further highlight the role of Joule heating, thermal AFM lithography of various blend film compositions (P3T:PMMA) was made using the heated tip AFM (HT-AFM) method. The thermal effects on local morphology were then studied not only as a function of sequential increase in local temperature, but also by nano-scale direct thermal-writing.
| Original language | English |
|---|---|
| Pages (from-to) | 1849-1855 |
| Number of pages | 7 |
| Journal | Soft Matter |
| Volume | 7 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2011 Mar 7 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
Cite this
Polythiophene precursor electrochemical nanolithography : Highly local thermal and morphological characterization. / Park, Jin Young; Taranekar, Prasad; Advincula, Rigoberto.
In: Soft Matter, Vol. 7, No. 5, 07.03.2011, p. 1849-1855.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polythiophene precursor electrochemical nanolithography
T2 - Highly local thermal and morphological characterization
AU - Park, Jin Young
AU - Taranekar, Prasad
AU - Advincula, Rigoberto
PY - 2011/3/7
Y1 - 2011/3/7
N2 - We describe the formation of nanopatterns on an electroactive polythiophene precursor (polyterthiophene methylmethacrylate, P3T) film using a current-sensing atomic force microscopy (CS-AFM) technique. Patterning parameters such as applied bias voltages, sweep duration, and scan rate were adapted for the nanolithographic electrochemical patterning process. The formation of nanopatterns on the film was mainly attributed to the electrochemical cross-linking and oxidation process of the terthiophene units. This is related to the electron transport process under an applied electric field and mass transfer due to Joule heating generated in a localized area from the tip. To further highlight the role of Joule heating, thermal AFM lithography of various blend film compositions (P3T:PMMA) was made using the heated tip AFM (HT-AFM) method. The thermal effects on local morphology were then studied not only as a function of sequential increase in local temperature, but also by nano-scale direct thermal-writing.
AB - We describe the formation of nanopatterns on an electroactive polythiophene precursor (polyterthiophene methylmethacrylate, P3T) film using a current-sensing atomic force microscopy (CS-AFM) technique. Patterning parameters such as applied bias voltages, sweep duration, and scan rate were adapted for the nanolithographic electrochemical patterning process. The formation of nanopatterns on the film was mainly attributed to the electrochemical cross-linking and oxidation process of the terthiophene units. This is related to the electron transport process under an applied electric field and mass transfer due to Joule heating generated in a localized area from the tip. To further highlight the role of Joule heating, thermal AFM lithography of various blend film compositions (P3T:PMMA) was made using the heated tip AFM (HT-AFM) method. The thermal effects on local morphology were then studied not only as a function of sequential increase in local temperature, but also by nano-scale direct thermal-writing.
UR - http://www.scopus.com/inward/record.url?scp=79951876720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951876720&partnerID=8YFLogxK
U2 - 10.1039/c0sm00993h
DO - 10.1039/c0sm00993h
M3 - Article
AN - SCOPUS:79951876720
VL - 7
SP - 1849
EP - 1855
JO - Soft Matter
JF - Soft Matter
SN - 1744-683X
IS - 5
ER -