Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Taro Yamada; Nao Takano; Keiko Yamada; Shuhei Yoshitomi; Tomoyuki Inoue; Tetsuya Osaka

doi:10.1109/NANO.2001.966456

Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Taro Yamada^*, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue, Tetsuya Osaka

^*Corresponding author for this work

Research Organization for Nano & Life Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (C_nH_2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni²⁺ or Cu²⁺ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

Original language	English
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Publisher	IEEE Computer Society
Pages	403-408
Number of pages	6
Volume	2001-January
ISBN (Print)	0780372158
DOIs	https://doi.org/10.1109/NANO.2001.966456
Publication status	Published - 2001
Event	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States Duration: 2001 Oct 28 → 2001 Oct 30

Other

Other	1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Country/Territory	United States
City	Maui
Period	01/10/28 → 01/10/30

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2001.966456

Cite this

Yamada, T, Takano, N, Yamada, K, Yoshitomi, S, Inoue, T & Osaka, T 2001, Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers. in Proceedings of the IEEE Conference on Nanotechnology. vol. 2001-January, 966456, IEEE Computer Society, pp. 403-408, 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001, Maui, United States, 01/10/28. https://doi.org/10.1109/NANO.2001.966456

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abstract = "A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.",

author = "Taro Yamada and Nao Takano and Keiko Yamada and Shuhei Yoshitomi and Tomoyuki Inoue and Tetsuya Osaka",

year = "2001",

doi = "10.1109/NANO.2001.966456",

language = "English",

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volume = "2001-January",

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AU - Yamada, Taro

AU - Takano, Nao

AU - Yamada, Keiko

AU - Yoshitomi, Shuhei

AU - Inoue, Tomoyuki

AU - Osaka, Tetsuya

PY - 2001

Y1 - 2001

N2 - A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

AB - A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

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Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Abstract

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