Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Taro Yamada*, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue, Tetsuya Osaka

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

Original languageEnglish
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Number of pages6
ISBN (Print)0780372158
Publication statusPublished - 2001
Event1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States
Duration: 2001 Oct 282001 Oct 30


Other1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics


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