Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

Muneyuki Naito, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu

Research output: Contribution to journalArticle

Abstract

We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

Original languageEnglish
Pages (from-to)340-343
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

Fingerprint

fluence
recovery
Annealing
Ions
damage
Recovery
annealing
ions
Substrates
Ion beams
Transmission electron microscopy
Defects
Microstructure
ion beams
transmission electron microscopy
microstructure
defects
Hot Temperature

Keywords

  • EELS mapping
  • Ion implantation
  • Iron silicides
  • Solid phase crystallization

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Post-annealing recrystallization and damage recovery process in Fe ion implanted Si. / Naito, Muneyuki; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2 SPEC. ISS., 01.04.2007, p. 340-343.

Research output: Contribution to journalArticle

@article{cfc52c1b8974477b8c8d697d20c6500d,
title = "Post-annealing recrystallization and damage recovery process in Fe ion implanted Si",
abstract = "We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.",
keywords = "EELS mapping, Ion implantation, Iron silicides, Solid phase crystallization",
author = "Muneyuki Naito and Akihiko Hirata and Manabu Ishimaru and Yoshihiko Hirotsu",
year = "2007",
month = "4",
day = "1",
doi = "10.1016/j.nimb.2007.01.023",
language = "English",
volume = "257",
pages = "340--343",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

AU - Naito, Muneyuki

AU - Hirata, Akihiko

AU - Ishimaru, Manabu

AU - Hirotsu, Yoshihiko

PY - 2007/4/1

Y1 - 2007/4/1

N2 - We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

AB - We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

KW - EELS mapping

KW - Ion implantation

KW - Iron silicides

KW - Solid phase crystallization

UR - http://www.scopus.com/inward/record.url?scp=33947629614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947629614&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2007.01.023

DO - 10.1016/j.nimb.2007.01.023

M3 - Article

AN - SCOPUS:33947629614

VL - 257

SP - 340

EP - 343

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2 SPEC. ISS.

ER -