Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

J. Senzaki, K. Fukuda, S. Imai, Y. Tanaka, Naoto Kobayashi, H. Tanoue, H. Okushi, K. Arai

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardless of the ion implantation temperature, the sheet resistances (Rs) decrease below 1600 °C post-annealing and increase above 1700 °C as the post-annealing temperature increases. The specified low Rs value is achieved in the sample implanted at 500 °C and annealed at 1600 °C, an order of magnitude smaller than that implanted at room temperature (RT). Atomic force microscopy (AFM) images reveal that the surface roughness of ion-implanted SiC increases with the increase of post-annealing temperature. Secondary ion mass spectroscopy (SIMS) results show that As+ dopant depth profiles of the sample implanted at 500 °C do not change before and after the post-annealing. On the other hand, for the sample implanted at RT, the As+ concentration in the ion-implanted layer decreases due to the outer-diffusion. These results indicate that high-temperature ion implantation is an effective method to prevent the outer-diffusion of As+ dopants during high-temperature post-annealing. It is considered that these post-annealing temperature dependences are caused by the evaporation of SiC surface layer.

Original languageEnglish
Pages (from-to)544-549
Number of pages6
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - 2000 Jun
Externally publishedYes

Fingerprint

Arsenic
arsenic
Silicon carbide
silicon carbides
Surface morphology
Electric properties
electrical properties
Annealing
Ions
temperature dependence
annealing
ion implantation
ions
Doping (additives)
Ion implantation
Temperature
low resistance
room temperature
temperature
Electron devices

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. / Senzaki, J.; Fukuda, K.; Imai, S.; Tanaka, Y.; Kobayashi, Naoto; Tanoue, H.; Okushi, H.; Arai, K.

In: Applied Surface Science, Vol. 159, 06.2000, p. 544-549.

Research output: Contribution to journalArticle

Senzaki, J. ; Fukuda, K. ; Imai, S. ; Tanaka, Y. ; Kobayashi, Naoto ; Tanoue, H. ; Okushi, H. ; Arai, K. / Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. In: Applied Surface Science. 2000 ; Vol. 159. pp. 544-549.
@article{22fed42490134e9cafad53c70c730533,
title = "Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature",
abstract = "High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardless of the ion implantation temperature, the sheet resistances (Rs) decrease below 1600 °C post-annealing and increase above 1700 °C as the post-annealing temperature increases. The specified low Rs value is achieved in the sample implanted at 500 °C and annealed at 1600 °C, an order of magnitude smaller than that implanted at room temperature (RT). Atomic force microscopy (AFM) images reveal that the surface roughness of ion-implanted SiC increases with the increase of post-annealing temperature. Secondary ion mass spectroscopy (SIMS) results show that As+ dopant depth profiles of the sample implanted at 500 °C do not change before and after the post-annealing. On the other hand, for the sample implanted at RT, the As+ concentration in the ion-implanted layer decreases due to the outer-diffusion. These results indicate that high-temperature ion implantation is an effective method to prevent the outer-diffusion of As+ dopants during high-temperature post-annealing. It is considered that these post-annealing temperature dependences are caused by the evaporation of SiC surface layer.",
author = "J. Senzaki and K. Fukuda and S. Imai and Y. Tanaka and Naoto Kobayashi and H. Tanoue and H. Okushi and K. Arai",
year = "2000",
month = "6",
doi = "10.1016/S0169-4332(00)00093-3",
language = "English",
volume = "159",
pages = "544--549",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

AU - Senzaki, J.

AU - Fukuda, K.

AU - Imai, S.

AU - Tanaka, Y.

AU - Kobayashi, Naoto

AU - Tanoue, H.

AU - Okushi, H.

AU - Arai, K.

PY - 2000/6

Y1 - 2000/6

N2 - High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardless of the ion implantation temperature, the sheet resistances (Rs) decrease below 1600 °C post-annealing and increase above 1700 °C as the post-annealing temperature increases. The specified low Rs value is achieved in the sample implanted at 500 °C and annealed at 1600 °C, an order of magnitude smaller than that implanted at room temperature (RT). Atomic force microscopy (AFM) images reveal that the surface roughness of ion-implanted SiC increases with the increase of post-annealing temperature. Secondary ion mass spectroscopy (SIMS) results show that As+ dopant depth profiles of the sample implanted at 500 °C do not change before and after the post-annealing. On the other hand, for the sample implanted at RT, the As+ concentration in the ion-implanted layer decreases due to the outer-diffusion. These results indicate that high-temperature ion implantation is an effective method to prevent the outer-diffusion of As+ dopants during high-temperature post-annealing. It is considered that these post-annealing temperature dependences are caused by the evaporation of SiC surface layer.

AB - High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardless of the ion implantation temperature, the sheet resistances (Rs) decrease below 1600 °C post-annealing and increase above 1700 °C as the post-annealing temperature increases. The specified low Rs value is achieved in the sample implanted at 500 °C and annealed at 1600 °C, an order of magnitude smaller than that implanted at room temperature (RT). Atomic force microscopy (AFM) images reveal that the surface roughness of ion-implanted SiC increases with the increase of post-annealing temperature. Secondary ion mass spectroscopy (SIMS) results show that As+ dopant depth profiles of the sample implanted at 500 °C do not change before and after the post-annealing. On the other hand, for the sample implanted at RT, the As+ concentration in the ion-implanted layer decreases due to the outer-diffusion. These results indicate that high-temperature ion implantation is an effective method to prevent the outer-diffusion of As+ dopants during high-temperature post-annealing. It is considered that these post-annealing temperature dependences are caused by the evaporation of SiC surface layer.

UR - http://www.scopus.com/inward/record.url?scp=0034205671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034205671&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00093-3

DO - 10.1016/S0169-4332(00)00093-3

M3 - Article

AN - SCOPUS:0034205671

VL - 159

SP - 544

EP - 549

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -