Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

J. Senzaki*, K. Fukuda, S. Imai, Y. Tanaka, Naoto Kobayashi, H. Tanoue, H. Okushi, K. Arai

*Corresponding author for this work

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy