Potential applications of surface channel diamond field-effect transistors

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

Original languageEnglish
Pages (from-to)1743-1748
Number of pages6
JournalDiamond and Related Materials
Volume10
Issue number9-10
DOIs
Publication statusPublished - 2001 Sep 1

Keywords

  • Cut-off frequency
  • Diamond
  • Field-effect transistors
  • Hydrogen terminated surface conductive layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Potential applications of surface channel diamond field-effect transistors'. Together they form a unique fingerprint.

  • Cite this