Potential applications of surface channel diamond field-effect transistors

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

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    30 Citations (Scopus)

    Abstract

    In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

    Original languageEnglish
    Pages (from-to)1743-1748
    Number of pages6
    JournalDiamond and Related Materials
    Volume10
    Issue number9-10
    DOIs
    Publication statusPublished - 2001 Sep

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    Keywords

    • Cut-off frequency
    • Diamond
    • Field-effect transistors
    • Hydrogen terminated surface conductive layer

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

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