Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

Shoma Kuga, Shinya Tajima, Jung Hoon Yang, Kazuyuki Hirama, Hiroshi Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Kuga, S., Tajima, S., Yang, J. H., Hirama, K., & Kawarada, H. (2008). Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796731] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796731