Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

Shoma Kuga, Shinya Tajima, Jung Hoon Yang, Kazuyuki Hirama, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    DOIs
    Publication statusPublished - 2008
    Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA
    Duration: 2008 Dec 152008 Dec 17

    Other

    Other2008 IEEE International Electron Devices Meeting, IEDM 2008
    CitySan Francisco, CA
    Period08/12/1508/12/17

    Fingerprint

    Diamond
    Field effect transistors
    Electrolytes
    Diamonds
    DNA
    field effect transistors
    deoxyribonucleic acid
    diamonds
    electrolytes
    Immobilized Nucleic Acids
    Gates (transistor)
    DNA Probes
    Transconductance
    complementary DNA
    Complementary DNA
    miniaturization
    transconductance
    discrimination
    direct current
    probes

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Kuga, S., Tajima, S., Yang, J. H., Hirama, K., & Kawarada, H. (2008). Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. In Technical Digest - International Electron Devices Meeting, IEDM [4796731] https://doi.org/10.1109/IEDM.2008.4796731

    Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. / Kuga, Shoma; Tajima, Shinya; Yang, Jung Hoon; Hirama, Kazuyuki; Kawarada, Hiroshi.

    Technical Digest - International Electron Devices Meeting, IEDM. 2008. 4796731.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kuga, S, Tajima, S, Yang, JH, Hirama, K & Kawarada, H 2008, Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. in Technical Digest - International Electron Devices Meeting, IEDM., 4796731, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796731
    Kuga S, Tajima S, Yang JH, Hirama K, Kawarada H. Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. In Technical Digest - International Electron Devices Meeting, IEDM. 2008. 4796731 https://doi.org/10.1109/IEDM.2008.4796731
    Kuga, Shoma ; Tajima, Shinya ; Yang, Jung Hoon ; Hirama, Kazuyuki ; Kawarada, Hiroshi. / Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET. Technical Digest - International Electron Devices Meeting, IEDM. 2008.
    @inproceedings{f0b892c647a84582858e917c4da5aa73,
    title = "Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.",
    abstract = "The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.",
    author = "Shoma Kuga and Shinya Tajima and Yang, {Jung Hoon} and Kazuyuki Hirama and Hiroshi Kawarada",
    year = "2008",
    doi = "10.1109/IEDM.2008.4796731",
    language = "English",
    isbn = "9781424423781",
    booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

    }

    TY - GEN

    T1 - Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.

    AU - Kuga, Shoma

    AU - Tajima, Shinya

    AU - Yang, Jung Hoon

    AU - Hirama, Kazuyuki

    AU - Kawarada, Hiroshi

    PY - 2008

    Y1 - 2008

    N2 - The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

    AB - The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.

    UR - http://www.scopus.com/inward/record.url?scp=64549135737&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=64549135737&partnerID=8YFLogxK

    U2 - 10.1109/IEDM.2008.4796731

    DO - 10.1109/IEDM.2008.4796731

    M3 - Conference contribution

    SN - 9781424423781

    BT - Technical Digest - International Electron Devices Meeting, IEDM

    ER -