Prediction of resist sensitivity for 13.5 nm EUV and 6.x nm EUV extension from sensitivity for EBL

Tomoko G. Oyama, Akihiro Oshima, Dang Tuan Nguyen, Satoshi Enomoto, Masakazu Washio, Seiichi Tagawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    9 Citations (Scopus)

    Abstract

    Extreme ultraviolet lithography (EUVL) at 13.5 nm will soon be applied in high-volume manufacturing of semiconductors, as a replacement to the ArF excimer laser immersion lithography. Recently, the potential application of exposure wavelengths of 6.x nm (particularly 6.6-6.8 nm) has been discussed as EUVL extension. The 6.x nm exposure source is currently under development, therefore screening of resists with conventional exposure tools will accelerate the selection or novel development of high sensitivity resists for 6.x nm EUVL. In the present study, the sensitivities of a chemically amplified (CA) resist (OEBR-CAP112) and non-CA resists (ZEP520A and poly(methyl methacrylate)) were evaluated with 30 keV and 75 keV electron beam lithography (EBL) tools. In terms of radiation chemistry, the obtained dose/sensitivities (μC cm-2) were converted into the absorbed doses (Gray; Gy = J kg-1). If EB- and EUV-induced chemical reactions are the same, the required absorbed doses for EB and EUV would be similar values. The sensitivities for EUV/soft X-rays including 6.x nm were predicted assuming the required absorbed doses in a resist would show similar values for both EB and EUV. We investigated precise sensitivities of the resists for EUV/soft X-rays including 6.7 nm using highly-monochromated synchrotron radiation. For both CA and non-CA resists, the predicted and experimentally obtained sensitivities agreed well with each other. These results suggested that almost the same chemical reactions are induced in resists for both EUVL and EBL. Hence, it was found that we can predict the resist sensitivities for EUV/soft X-rays at any exposure wavelength from the exposure results for EBL.

    Original languageEnglish
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    Volume8679
    DOIs
    Publication statusPublished - 2013
    EventExtreme Ultraviolet (EUV) Lithography IV - San Jose, CA
    Duration: 2013 Feb 252013 Feb 28

    Other

    OtherExtreme Ultraviolet (EUV) Lithography IV
    CitySan Jose, CA
    Period13/2/2513/2/28

    Fingerprint

    Electron Beam Lithography
    Extreme ultraviolet lithography
    Electron beam lithography
    Resist
    lithography
    electron beams
    Extreme Ultraviolet Lithography
    Prediction
    sensitivity
    predictions
    X rays
    Soft X-ray
    Chemical reactions
    Dose
    Radiation chemistry
    Wavelength
    dosage
    Excimer lasers
    Polymethyl Methacrylate
    Synchrotron radiation

    Keywords

    • 13.5 nm
    • 6.x nm
    • CA
    • EBL
    • EUVL
    • Non-CAR
    • Resist sensitivity

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Oyama, T. G., Oshima, A., Nguyen, D. T., Enomoto, S., Washio, M., & Tagawa, S. (2013). Prediction of resist sensitivity for 13.5 nm EUV and 6.x nm EUV extension from sensitivity for EBL. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8679). [86792A] https://doi.org/10.1117/12.2011442

    Prediction of resist sensitivity for 13.5 nm EUV and 6.x nm EUV extension from sensitivity for EBL. / Oyama, Tomoko G.; Oshima, Akihiro; Nguyen, Dang Tuan; Enomoto, Satoshi; Washio, Masakazu; Tagawa, Seiichi.

    Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8679 2013. 86792A.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Oyama, TG, Oshima, A, Nguyen, DT, Enomoto, S, Washio, M & Tagawa, S 2013, Prediction of resist sensitivity for 13.5 nm EUV and 6.x nm EUV extension from sensitivity for EBL. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8679, 86792A, Extreme Ultraviolet (EUV) Lithography IV, San Jose, CA, 13/2/25. https://doi.org/10.1117/12.2011442
    Oyama TG, Oshima A, Nguyen DT, Enomoto S, Washio M, Tagawa S. Prediction of resist sensitivity for 13.5 nm EUV and 6.x nm EUV extension from sensitivity for EBL. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8679. 2013. 86792A https://doi.org/10.1117/12.2011442
    Oyama, Tomoko G. ; Oshima, Akihiro ; Nguyen, Dang Tuan ; Enomoto, Satoshi ; Washio, Masakazu ; Tagawa, Seiichi. / Prediction of resist sensitivity for 13.5 nm EUV and 6.x nm EUV extension from sensitivity for EBL. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8679 2013.
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    abstract = "Extreme ultraviolet lithography (EUVL) at 13.5 nm will soon be applied in high-volume manufacturing of semiconductors, as a replacement to the ArF excimer laser immersion lithography. Recently, the potential application of exposure wavelengths of 6.x nm (particularly 6.6-6.8 nm) has been discussed as EUVL extension. The 6.x nm exposure source is currently under development, therefore screening of resists with conventional exposure tools will accelerate the selection or novel development of high sensitivity resists for 6.x nm EUVL. In the present study, the sensitivities of a chemically amplified (CA) resist (OEBR-CAP112) and non-CA resists (ZEP520A and poly(methyl methacrylate)) were evaluated with 30 keV and 75 keV electron beam lithography (EBL) tools. In terms of radiation chemistry, the obtained dose/sensitivities (μC cm-2) were converted into the absorbed doses (Gray; Gy = J kg-1). If EB- and EUV-induced chemical reactions are the same, the required absorbed doses for EB and EUV would be similar values. The sensitivities for EUV/soft X-rays including 6.x nm were predicted assuming the required absorbed doses in a resist would show similar values for both EB and EUV. We investigated precise sensitivities of the resists for EUV/soft X-rays including 6.7 nm using highly-monochromated synchrotron radiation. For both CA and non-CA resists, the predicted and experimentally obtained sensitivities agreed well with each other. These results suggested that almost the same chemical reactions are induced in resists for both EUVL and EBL. Hence, it was found that we can predict the resist sensitivities for EUV/soft X-rays at any exposure wavelength from the exposure results for EBL.",
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