Preferred alignment of mesochannels in a mesoporous silica film grown on a silicon (110) surface

Hirokatsu Miyata, Kazuyuki Kuroda

    Research output: Contribution to journalArticle

    116 Citations (Scopus)

    Abstract

    It has been proved that surfactant-silicate supramolecular architecture formed on a silicon substrate is strongly affected by the crystal orientation of a silicon wafer, indicating the variation of the interactions between the surfactants and the silicon surfaces. The hexagonal mesoporous silica film with aligned mesochannels was grown on a (110) wafer, whereas the mesochannels were not aligned in the films grown on (100) and (111) wafers. The alignment direction of the mesochannels on the (110) wafer is parallel to the [001] direction. The Gaussian distribution of the alignment direction with a full width at half-maximum (fwhm) of 29°was shown by in-plane X-ray diffraction. The hexagonal packing of the mesochannels in the film is distorted. The strong anisotropy of the atomic arrangement of silicon on the (110) surface causes the preferential alignment of mesochannels.

    Original languageEnglish
    Pages (from-to)7618-7624
    Number of pages7
    JournalJournal of the American Chemical Society
    Volume121
    Issue number33
    DOIs
    Publication statusPublished - 1999 Aug 25

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    Silicon
    Silicon Dioxide
    Silica
    Surface-Active Agents
    Surface active agents
    Silicates
    Gaussian distribution
    Full width at half maximum
    Silicon wafers
    Crystal orientation
    Normal Distribution
    Anisotropy
    X-Ray Diffraction
    X ray diffraction
    Substrates
    Direction compound

    ASJC Scopus subject areas

    • Chemistry(all)

    Cite this

    Preferred alignment of mesochannels in a mesoporous silica film grown on a silicon (110) surface. / Miyata, Hirokatsu; Kuroda, Kazuyuki.

    In: Journal of the American Chemical Society, Vol. 121, No. 33, 25.08.1999, p. 7618-7624.

    Research output: Contribution to journalArticle

    @article{626e8dd0deb147a5aa4b3a1a550f61bb,
    title = "Preferred alignment of mesochannels in a mesoporous silica film grown on a silicon (110) surface",
    abstract = "It has been proved that surfactant-silicate supramolecular architecture formed on a silicon substrate is strongly affected by the crystal orientation of a silicon wafer, indicating the variation of the interactions between the surfactants and the silicon surfaces. The hexagonal mesoporous silica film with aligned mesochannels was grown on a (110) wafer, whereas the mesochannels were not aligned in the films grown on (100) and (111) wafers. The alignment direction of the mesochannels on the (110) wafer is parallel to the [001] direction. The Gaussian distribution of the alignment direction with a full width at half-maximum (fwhm) of 29°was shown by in-plane X-ray diffraction. The hexagonal packing of the mesochannels in the film is distorted. The strong anisotropy of the atomic arrangement of silicon on the (110) surface causes the preferential alignment of mesochannels.",
    author = "Hirokatsu Miyata and Kazuyuki Kuroda",
    year = "1999",
    month = "8",
    day = "25",
    doi = "10.1021/ja990758m",
    language = "English",
    volume = "121",
    pages = "7618--7624",
    journal = "Journal of the American Chemical Society",
    issn = "0002-7863",
    publisher = "American Chemical Society",
    number = "33",

    }

    TY - JOUR

    T1 - Preferred alignment of mesochannels in a mesoporous silica film grown on a silicon (110) surface

    AU - Miyata, Hirokatsu

    AU - Kuroda, Kazuyuki

    PY - 1999/8/25

    Y1 - 1999/8/25

    N2 - It has been proved that surfactant-silicate supramolecular architecture formed on a silicon substrate is strongly affected by the crystal orientation of a silicon wafer, indicating the variation of the interactions between the surfactants and the silicon surfaces. The hexagonal mesoporous silica film with aligned mesochannels was grown on a (110) wafer, whereas the mesochannels were not aligned in the films grown on (100) and (111) wafers. The alignment direction of the mesochannels on the (110) wafer is parallel to the [001] direction. The Gaussian distribution of the alignment direction with a full width at half-maximum (fwhm) of 29°was shown by in-plane X-ray diffraction. The hexagonal packing of the mesochannels in the film is distorted. The strong anisotropy of the atomic arrangement of silicon on the (110) surface causes the preferential alignment of mesochannels.

    AB - It has been proved that surfactant-silicate supramolecular architecture formed on a silicon substrate is strongly affected by the crystal orientation of a silicon wafer, indicating the variation of the interactions between the surfactants and the silicon surfaces. The hexagonal mesoporous silica film with aligned mesochannels was grown on a (110) wafer, whereas the mesochannels were not aligned in the films grown on (100) and (111) wafers. The alignment direction of the mesochannels on the (110) wafer is parallel to the [001] direction. The Gaussian distribution of the alignment direction with a full width at half-maximum (fwhm) of 29°was shown by in-plane X-ray diffraction. The hexagonal packing of the mesochannels in the film is distorted. The strong anisotropy of the atomic arrangement of silicon on the (110) surface causes the preferential alignment of mesochannels.

    UR - http://www.scopus.com/inward/record.url?scp=0033603833&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0033603833&partnerID=8YFLogxK

    U2 - 10.1021/ja990758m

    DO - 10.1021/ja990758m

    M3 - Article

    VL - 121

    SP - 7618

    EP - 7624

    JO - Journal of the American Chemical Society

    JF - Journal of the American Chemical Society

    SN - 0002-7863

    IS - 33

    ER -