Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

Suguru Noda, Kun Tepsanongsuk, Yoshiko Tsuji, Yuya Kajikawa, Yoshifumi Ogawa, Hiroshi Komiyama

Research output: Contribution to journalArticle

16 Citations (Scopus)


The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were studied. The formation mechanisms of these structures were systematically explained by mapping them in 2D graphs of film thickness against N2/Ar flow ratio. The texture maps of films deposited on a-SiO2 substrates were found to reflect both nucleation and growth states, while that of films deposited on poly-fcc TaN substrates reflected the growth stages. It was also found that evolutionary selection growth ocurred when the film was 200 nm thick to cause the PO change.

Original languageEnglish
Pages (from-to)332-338
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
Publication statusPublished - 2004 Mar 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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