Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

Suguru Noda; Kun Tepsanongsuk; Yoshiko Tsuji; Yuya Kajikawa; Yoshifumi Ogawa; Hiroshi Komiyama

doi:10.1116/1.1647593

Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

Suguru Noda^*, Kun Tepsanongsuk, Yoshiko Tsuji, Yuya Kajikawa, Yoshifumi Ogawa, Hiroshi Komiyama

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were studied. The formation mechanisms of these structures were systematically explained by mapping them in 2D graphs of film thickness against N₂/Ar flow ratio. The texture maps of films deposited on a-SiO₂ substrates were found to reflect both nucleation and growth states, while that of films deposited on poly-fcc TaN substrates reflected the growth stages. It was also found that evolutionary selection growth ocurred when the film was 200 nm thick to cause the PO change.

Original language	English
Pages (from-to)	332-338
Number of pages	7
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	2
DOIs	https://doi.org/10.1116/1.1647593
Publication status	Published - 2004 Mar
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were studied. The formation mechanisms of these structures were systematically explained by mapping them in 2D graphs of film thickness against N2/Ar flow ratio. The texture maps of films deposited on a-SiO2 substrates were found to reflect both nucleation and growth states, while that of films deposited on poly-fcc TaN substrates reflected the growth stages. It was also found that evolutionary selection growth ocurred when the film was 200 nm thick to cause the PO change.",

author = "Suguru Noda and Kun Tepsanongsuk and Yoshiko Tsuji and Yuya Kajikawa and Yoshifumi Ogawa and Hiroshi Komiyama",

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T1 - Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

AU - Noda, Suguru

AU - Tepsanongsuk, Kun

AU - Tsuji, Yoshiko

AU - Kajikawa, Yuya

AU - Ogawa, Yoshifumi

AU - Komiyama, Hiroshi

PY - 2004/3

Y1 - 2004/3

N2 - The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were studied. The formation mechanisms of these structures were systematically explained by mapping them in 2D graphs of film thickness against N2/Ar flow ratio. The texture maps of films deposited on a-SiO2 substrates were found to reflect both nucleation and growth states, while that of films deposited on poly-fcc TaN substrates reflected the growth stages. It was also found that evolutionary selection growth ocurred when the film was 200 nm thick to cause the PO change.

AB - The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were studied. The formation mechanisms of these structures were systematically explained by mapping them in 2D graphs of film thickness against N2/Ar flow ratio. The texture maps of films deposited on a-SiO2 substrates were found to reflect both nucleation and growth states, while that of films deposited on poly-fcc TaN substrates reflected the growth stages. It was also found that evolutionary selection growth ocurred when the film was 200 nm thick to cause the PO change.

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Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

Abstract

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