Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films

Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We investigated the mechanism that determines the preferred orientation of polycrystalline silicon carbide (SiC) films prepared by CVD from a mixture of dichlorodimethylsilane (DDS) and He. X-ray diffraction (XRD) measurements indicated that the major growth direction is either the (220) or the (111) plane. We developed a numerical model for predicting the preferred orientation, assuming Langmuir-type adsorption and reaction of the growth species. This model suggests that the (111) plane appears under reaction-limited deposition, while the (220) plane appears under adsorption-limited deposition. Our experimental and numerical results show good qualitative agreement with experimental results for films prepared from methyltrichlorosilane (MTS) and H2.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalChemical Vapor Deposition
Volume8
Issue number3
DOIs
Publication statusPublished - 2002 May
Externally publishedYes

Fingerprint

Polysilicon
Silicon carbide
silicon carbides
Vapors
vapors
Adsorption
adsorption
Numerical models
Chemical vapor deposition
vapor deposition
X ray diffraction
diffraction
x rays
silicon carbide
methyltrichlorosilane
Direction compound
dichlorodimethylsilane

Keywords

  • Langmuir-type adsorption
  • Preferred orientation
  • Silicon carbide
  • Theoretical modeling

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films. / Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi.

In: Chemical Vapor Deposition, Vol. 8, No. 3, 05.2002, p. 99-104.

Research output: Contribution to journalArticle

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