Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films

Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama

Research output: Contribution to journalArticle

Abstract

We investigated the mechanism that determines the preferred orientation of polycrystalline silicon carbide (SiC) films prepared by CVD from a mixture of dichlorodimethylsilane (DDS) and He, X-ray diffraction (XRD) measurements indicated that the major growth direction is either the (220) or the (111) plane. We developed a numerical model for predicting the preferred orientation, assuming Langmuir-type adsorption and reaction of the growth species. This model suggests that the (111) plane appears under reaction-limited deposition, while the (220) plane appears under adsorption-limited deposition. Our experimental and numerical results show good qualitative agreement with experimental results for films prepared from methyltrichlorosilane (MTS) and H2.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalAdvanced Materials
Volume14
Issue number9
Publication statusPublished - 2002 May 3

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Keywords

  • Langmuir-type adsorption
  • Preferred orientation
  • Silicon carbide
  • Theoretical modeling

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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