Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides

Takayuki Watanabe, Keisuke Saito, Minoru Osada, Hiroshi Funakubo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages155-160
Number of pages6
Volume688
Publication statusPublished - 2002
Externally publishedYes
EventFerroelectric Thin Films X - Boston, MA, United States
Duration: 2001 Nov 252001 Nov 29

Other

OtherFerroelectric Thin Films X
CountryUnited States
CityBoston, MA
Period01/11/2501/11/29

Fingerprint

Corundum
Metallorganic chemical vapor deposition
Oxides
Conductive materials
Thin films
Remanence
Epitaxial films
Bismuth
Epitaxial growth
Aluminum Oxide
Lattice constants
Ferroelectric materials
Sputtering
Hysteresis
Single crystals
X ray diffraction
Substrates
titanium dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Watanabe, T., Saito, K., Osada, M., & Funakubo, H. (2002). Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides. In Materials Research Society Symposium - Proceedings (Vol. 688, pp. 155-160)

Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides. / Watanabe, Takayuki; Saito, Keisuke; Osada, Minoru; Funakubo, Hiroshi.

Materials Research Society Symposium - Proceedings. Vol. 688 2002. p. 155-160.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watanabe, T, Saito, K, Osada, M & Funakubo, H 2002, Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides. in Materials Research Society Symposium - Proceedings. vol. 688, pp. 155-160, Ferroelectric Thin Films X, Boston, MA, United States, 01/11/25.
Watanabe T, Saito K, Osada M, Funakubo H. Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides. In Materials Research Society Symposium - Proceedings. Vol. 688. 2002. p. 155-160
Watanabe, Takayuki ; Saito, Keisuke ; Osada, Minoru ; Funakubo, Hiroshi. / Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides. Materials Research Society Symposium - Proceedings. Vol. 688 2002. pp. 155-160
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