Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides

Takayuki Watanabe*, Keisuke Saito, Minoru Osada, Hiroshi Funakubo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)


a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Number of pages6
Publication statusPublished - 2002
Externally publishedYes
EventFerroelectric Thin Films X - Boston, MA, United States
Duration: 2001 Nov 252001 Nov 29


OtherFerroelectric Thin Films X
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>-based thin films on rutile-type oxides'. Together they form a unique fingerprint.

Cite this