Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching

Takayuki Watanabe*, Hiroshi Funakubo, Keisuke Saito, Toshimasa Suzuki, Masayuki Fujimoto, Minoru Osada, Yuji Noguchi, Masaru Miyayama

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)


a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 (rutile) substrates at 630°C by metalorganic chemical vapor deposition and their perfect epitaxial growths were confirmed by several x-ray diffraction measurements. As the bottom electrode, (101)-oriented conductive materials with the same rutile-type structure as the TiO2, RuO2, and IrO2, were epitaxially grown on (101)TiO2, (012)Al2O3, and (110)Al 2O3 substrates. Finally, a- and b-axis-oriented Bi 4Ti3O12-based materials, (Bi 4-xNdx)(Ti3-yVy)O12, were epitaxially grown on these conductive substrates with high reproducibility and a well-saturated P-E hysteresis loop with a remanent polarization above 20 μC/cm2 was observed. These results open the long-range lattice matching growth (the c-axis lattice parameter is about 3.3 nm) of a- and b-axis-oriented bismuth layer-structured ferroelectrics on conductive electrodes.

Original languageEnglish
Pages (from-to)1660-1662
Number of pages3
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2002 Aug 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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