Preparation and Characterization of a New Ge-Sb-Te Thin Film

Tomohiro Suzuki, Takahiro Ishizaki, Satoru Mori, Akio Fuwa

    Research output: Contribution to journalArticle

    Abstract

    Ge 10Sb 67.5Te 22.5 thin films were prepared by RF magnetron sputtering from a single high purity Ge 10Sb 67.5Te 22.5 target under the following condition: RF power: 30 W, Ar pressure: 1.067 Pa, Ar flow: 9 ccm, substrate temperature: room temperature (water cooling), distance between target and substrate: 7 cm, and sputtering time: 10∼40 min. Although the as-deposited film was amorphous, annealing for 30 min at 573 K allowed it to be crystallized. The crystallization temperature and the activation energy of Ge 10Sb 67.5Te 22.5 thin film were around 463 K and 2.50 eV, respectively, while those of Ge 2Sb 2Te 5 thin film, prepared under the same conditions as stated above, were around 408 K and 2.04 eV, respectively. The difference of optical constants between crystalline and amorphous phases of Ge 10Sb 67.5Te 22.5 and Ge 2Sb 2Te 5 thin films were -0.9 + i0.93 and -0.77 + i0.67, respectively, in a blue laser area, i.e., wavelength 405 nm.

    Original languageEnglish
    Pages (from-to)90-93
    Number of pages4
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Volume68
    Issue number2
    Publication statusPublished - 2004 Feb

    Fingerprint

    Thin films
    preparation
    thin films
    liquid cooling
    Optical constants
    Cooling water
    Amorphous films
    Substrates
    Crystallization
    Magnetron sputtering
    Temperature
    Sputtering
    magnetron sputtering
    purity
    Activation energy
    sputtering
    Annealing
    crystallization
    activation energy
    Crystalline materials

    Keywords

    • Activation energy
    • Germanium-antimony- tellurium
    • Optical constant
    • Phase change optical disk
    • Sputtering

    ASJC Scopus subject areas

    • Metals and Alloys

    Cite this

    Preparation and Characterization of a New Ge-Sb-Te Thin Film. / Suzuki, Tomohiro; Ishizaki, Takahiro; Mori, Satoru; Fuwa, Akio.

    In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 68, No. 2, 02.2004, p. 90-93.

    Research output: Contribution to journalArticle

    Suzuki, Tomohiro ; Ishizaki, Takahiro ; Mori, Satoru ; Fuwa, Akio. / Preparation and Characterization of a New Ge-Sb-Te Thin Film. In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals. 2004 ; Vol. 68, No. 2. pp. 90-93.
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