PREPARATION AND PROPERTIES OF CeB//6, SmB//6, AND GdB//6.

T. Tanaka, R. Nishitani, C. Oshima, E. Bannai, S. Kawai

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    Abstract

    Single crystals of CeB//6, SmB//6, and GdB//6 have been prepared by a floating-zone technique under a pressurized gas atmosphere of Ar. A zone leveling technique has been used successfully to prepare single crystals of GdB//6, a compound which peritectically decomposes. The crystals so obtained were almost stoichiometric and had a low-impurity level. The measured work functions of (001) surfaces of CeB//6 and GdB//6 are 2. 6 plus or minus 0. 1 eV, respectively. The temperature dependence of the electrical resistivity of CeB//6 resembles that of CeAl//3. The temperature dependence of the resistivity of SmB//6 single crystals is like that of a semiconductor and is similar to those reported for polycrystalline specimens.

    Original languageEnglish
    Pages (from-to)3877-3883
    Number of pages7
    JournalJournal of Applied Physics
    Volume51
    Issue number7
    DOIs
    Publication statusPublished - 1980 Jul

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Tanaka, T., Nishitani, R., Oshima, C., Bannai, E., & Kawai, S. (1980). PREPARATION AND PROPERTIES OF CeB//6, SmB//6, AND GdB//6. Journal of Applied Physics, 51(7), 3877-3883. https://doi.org/10.1063/1.328133